Introduction to Nanotechnology

TABULATIONS OF SEMICONDUCTING MATERIAL PROPERTIES 363
Table B.3. Comparison of the nearest-neighbor distance a aa of several
semiconductor llLV and lLVl binary compounds AC with the sums of the
corresponding ionic radii, and with the sums of the corresponding monatomic
lattice radii'
a &a A" + C"+ A+B Compound
Compound Distance Ionic Sum Monatomic Sum Type
ZnS 0.234 0.258 0.23 1 Semiconductor
A1P 0.236 0.263 0.253 Semiconductor
GaAs 0.245 0.284 0.246 Semiconductor
CdS 0.252 0.281 0.247 Semiconductor
HgTe 0.279 0.321 0.294 Semiconductor
InSb 0.281 0.326 0.308 Semiconductor
NaCl 0.282 0.278 0.350 Alkali halide
KBr 0.353 0.353 0.404 Alkali halide
RbI 0.367 0.367 0.419 Alkali halide
MgO 0.21 1 0.198 01232 Alkaline-earth
chalcogenide
CaS 0.285 0.283 0.299 Alkaline-earth
chalcogenide
SrSe 0.301 0.303 0.419 Alkaline-earth
chalcogenide
"For comparison purposes data are shown for some alkali halides and alkaline-earth chalcogenides.
The distances are in nanometers.
Table B.4. Molecular mass of groups llLV and lLVl compounds'
P As Sb S Se Te
A1 57.95 101.90 148.73 Zn 97.43 144.34 192.99
Ga 100.69 144.64 191.47 Cd 144.46 191.36 240.00
In 145.79 189.74 256.57 Hg 232.65 279.55 328.19
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____
~____ ~
"The atomic masses of Si and Ge, respectively, are & (56.172) and & (145. IS).
Source: Data from Handbook of' Chemistry and Physics, CRC Press, Boca Raton, FL, 2002,
pp. 12-57, 12-58.
Table 8.5. Density in g/cm3 of groups llLV and lLVl compounds'
P As Sb S Se Te
A1 2.42 3.81 4.22 Zn 4.08 5.42 6.34
Ga 4.13 5.32 5.62 Cd 4.82 0.567 5.86
In 4.79 5.66 5.78 Hg 7.73 8.25 8.17
"The densities of Si and Ge, respectively, are 2.3283 and 5.3234.
Source: Data from Handbook of Chemistry and Physics, CRC Press, Boca Raton, FL, 2002, pp. 12-57,
12-58.