Introduction to Nanotechnology

Table B.8. Effective masses m+ relative to free-electron mass m, of conduction band electrons and three types of valence band holesa
Electron Heavy-Hole Light-Hole Splitoff Hole Spin-Orbit
Effective Mass Effective Mass Effective Mass Effective Mass Splitting Aso (eV)
P As Sb P As Sb P As Sb P As Sb P As Sb
Ga - 0.067 0.047 0.57 0.53 0.8 0.18 0.08 0.05 0.25 0.15 0.12 0.08 0.34 0.75
In 0.073 0.026 0.014 0.58 0.4 0.42 0.12 0.026 0.016 0.12 0.14 0.43 0.11 0.38 0.81
Ge 0.41 Si 0.54, Ge 0.34 Si 0.15, Ge 0.043 Si 0.23, Ge 0.09 Si 0.044, Ge 0.295
"The spin-rbit splitting parameter As0 is also listed. The splitoff hole effective mass arises from spin-orbit coupling, which was not taken into account in this book.
Corresponding values for Si and Ge are listed below the 111-V values.
Source: Data are from P. Y. Yu and M. Cardona, Fundamentals of Semiconductors, Springer, Berlin, 2001, pp. 71, 75, supplemented by G. Bums, Solid State Physics,
Academic Press, New York, p. 312.