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Introduction to Nanotechnology

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(a)<br />

(LI (dl<br />

10.1. SELF-ASSEMBLY 261<br />

Figure 10.1. fransmission electron mrcroscqy images ol the successive growth of sslands of<br />

InAs on aGaAs (001) subslrale lor fradional monolayer coverages of (a) 0.1, (b) 0.3. (c) 0.6, and<br />

(d) 1 .O. The image sizes are 50nm x 50 nm loor (a) and 41) nm x 40 nm for (b) <strong>to</strong> (d). The insel for<br />

(a) IS an enlarged view of the GaAs substnale. [From J. €3. Belk. J. L. Sudijono, M. M. Holmes,<br />

C. F. McCanville, T. S. Jones. and R. A. Joyce, Surf. Sci 365, 735 (1996).]<br />

that is, the entity RS-Au is formed on a gold substrate, and the binding for the acid<br />

is RCO?-(MO),,, where MO denotes a metal oxide substmte ion, and the hydrogen<br />

a<strong>to</strong>m H of the acid is rcclcawd at the formalion of the hiid. The alkancthiols RSH<br />

are The most widely used ligands because of their greater solubility, their compa-<br />

tibility with many organic functional groups, and their speed of reaction. They<br />

spontaneously adsorb QII thc surface; hence the term sefllnsrembk is applicable. In<br />

this section we consider thc sclf-assembly of the thiol ligtlnd X(CH1),, SH, where the<br />

terminal group X is methyl (CH3) and n typical value is 17 = 9 for decanethiol.<br />

corresponding <strong>to</strong> CI& for R.<br />

To preparc a gold substrate as an extended siae for the sclf-assembly, an electron<br />

beam or high-temperature healing elemcnt is used <strong>to</strong> maporate n polycrystalline<br />

layer of gold that is 5-300 nrn thick on <strong>to</strong> n polished support such as a glass slide, a<br />

r<br />

=-

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