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Introduction to Nanotechnology

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9.3. SIZE AND DIMENSIONALITY EFFECTS 241<br />

The energy of a two-dimensional infinite rectangular square well<br />

( s ) ( n : E, = + n:) = Eon2 (9.9)<br />

depends on two quantum numbers, n, = 0, 1,2,3, . . . and ny = 0, 1,2,3, . . . , where<br />

n2 = n: + nj. This means that the lowest energy state El = Eo has two possibilities,<br />

namely, n, = 0, ny = 1, and n, = 1, ny = 0, so the <strong>to</strong>tal degeneracy (including spin<br />

direction) is 4. The energy state E, = 25E0 has more possibilities since it can have,<br />

for example, n, = 0, ny = 5, or n, = 3 and n,, = 4, and so on, so its degeneracy is 8.<br />

9.3.5. Partial Confinement<br />

In the previous section we examined the confinement of electrons in various<br />

dimensions, and we found that it always leads <strong>to</strong> a qualitatively similar spectrum<br />

of discrete energies. This is true for a broad class of potential wells, irrespective of<br />

their dimensionality and shape. We also examined, in Section 9.3.3, the Fermi gas<br />

model for delocalized electrons in these same dimensions and found that the model<br />

leads <strong>to</strong> energies and densities of states that differ quite significantly from each other.<br />

This means that many electronic and other properties of metals and semiconduc<strong>to</strong>rs<br />

change dramatically when the dimensionality changes. Some nanostructures of<br />

technological interest exhibit both potential well confinement and Fermi gas<br />

delocalization, confinement in one or two dimensions, and delocalization in two<br />

or one dimensions, so it will be instructive <strong>to</strong> show how these two strikingly different<br />

behaviors coexist.<br />

In a three-dimensional Fermi sphere the energy varies from E = 0 at the origin <strong>to</strong><br />

E = E, at the Fermi surface, and similarly for the one- and two-dimensional analogs.<br />

When there is confinement in one or two directions, the conduction electrons will<br />

distribute themselves among the corresponding potential well levels that lie below<br />

the Fermi level along confinement coordinate directions, in accordance with their<br />

respective degeneracies d,, and for each case the electrons will delocalize in the<br />

remaining dimensions by populating Fermi gas levels in the delocalization direction<br />

of the reciprocal lattice. Table 9.5 lists the formulas for the energy dependence of the<br />

number of electrons N(E) for quantum dots that exhibit <strong>to</strong>tal confinement, quantum<br />

wires and quantum wells, which involve partial confinement, and bulk material,<br />

where there is no confinement. The density of states formulas D(E) for these four<br />

cases are also listed in the table. The summations in these expressions are over the<br />

various confinement well levels i.<br />

Figure 9.15 shows plots of the energy dependence N(E) and the density of states<br />

D(E) for the four types of nanostructures listed in Table 9.5. We see that the number<br />

of electrons N(E) increases with the energy E, so the four nanostructure types vary<br />

only qualitatively from each other. However, it is the density of states D(E) that<br />

determines the various electronic and other properties, and these differ dramatically<br />

for each of the three nanostructure types. This means that the nature of the

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