Introduction to Nanotechnology

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Re (rhenium) nanoparticle magnetic moment, 89 reactivity nanoparticle, 83 nanoparticle, measurement of, 83, 84 read mode, 182, 346 reciprocal space, 22, 234 sketch, 23 reflection high energy electron diffraction (MEED), 45 rehybridize, 124 remnant magnetization, 169, 170 particle size dependence, 172 replication, 3 19 repulsion hard-sphere, 158 soft, 158 residue, 314 resist, 228, 263 resistor network, 232 responsivity, 250, 251 RF plasma nanoparticle synthesis, 97, 98 Rh (rhodium), 265, 266, 279 ribonucleic acid, see RNA ribosome, 315, 324 rigid beam vibration, 7 RNA (ribonucleic acid), 257, 3 14, 320, 323 messenger, 323 rotaxane, 351-353 Ru (ruthenium), 279 bonded to nanotube, 129 catalyst, 129 rubber, 284 Rydberg level x-ray emission, 66 series, 196, 244 series, exciton, 32 series, figure, 33 saponite, 274, 276 saturation magnetization, 170 particle size dependence, 174 Sb (antimony), size, 42 SC, simple cubic, 36 scanning electron microscope, 150, 292 image, 177, 178 scanning microscopy, 5 1 scanning transmission electron microscope, 52, 53 schematic, 53 scanning tunneling microscope (STM), 24, 52,54, 118, 119, 336338,341 INDEX 385 constant height and constant current modes, 55 scattering conduction electrons, 4 intraband, 232 length, 4 light, 286 scattering length, 73 Schrodinger equation, 77 scooter mechanism, 1 17 screening, Debye, 159 Se (selenium) crystal, 154 optical spectrum, 156 secondary structure, 3 15, 3 18 Seebeck effect, 244 self assembled monolayer (SAM), 80, 260 self assembly, 4, 257, 261-263, 294-297, 300, 330 octanethiol, 349 polyamine dendnmer, 300 supramolecular, 302 semiconductor, 20 indirect gap, 25, 27, 30 intrinsic, 21 n-type, 21, 152 p-ty~e, 21, 152 semiconductor property tabulations (Appendix B), 361 sensor, chemical, 128 serine, 325 shielding, electromagnetic, 293 short range order, 9 shot noise, 246 Si (silicon), 15, 25, 260 bandgap, 31 carrier density, 26, 29 computer chip, 345 donor, 30 etched, 150 n-type, 152 nanoparticle, 90 nanoparticle photodissociation, 92 P-type, 152 porous, 15 1 Raman spectrum, 205-207 wafer, 151 wafer, etched, 152 29 Si, nuclear magnetic resonance, 269, 270 SiCN FTIR, 60 nanopowder FTIR, 59 silane, 300 silanol, 269, 270
silica, 269 silica-alumina, 269, 277 silicon, see Si, silver, see Ag single electrin tunneling, 120, 245-248 SiO,, 260 protective layer, 147 substrate, 49 size effects, 231 smectite, 274 sodium (Na) azide, 3 beam, 3 nanoparticle, 3 soft magnetic material, 170 solid state physics, 8 long range order, 9 s-orbital, 105 source, 245, 246 sp hybridization, 107 space dual, 22 group, 36, 37, 39 reciprocal, 22 specific heats of semiconductors, table of values, 368 specific surface area, 265-268 sphalerite, 16, 361 spin quantum number, 167, 239 spinel MgAIzO,, 11, 200 spiropyran, 347 spring oscillation, 34 1 square well energies, 237-239 finite, 239 infinite, 237, 238 two dimensional, 240 wave functions, 238 stacking fault, 233 star polymer, 294 steel alloy, 124 containing nanotubes, 13 1, 132 tensile strength, 131, 132 stereographic projection, 52 steric acid, 3 15 Stem-Gerlach experiment, 88 Stokes line, 59 Stone-Wohlfarth model, 174 storage information, 147 magnetic, 173, 182 Stranski-Krastanov growth, 260 structure face centered cubic, 78 geometric, 78 icosahedral, 78, 153 surface, 45 substrate, 228, 258 sugar, 3 16 sulfobetaine, 279, 280 superalloy micrograph, 49 superconductivity, 4, 253 superconductor, high temperature type, 153 superfluidity, 95 superparamagnetism, 88, 171 supramolecular dendrimer, 302-304 self-assembly, 302 structure, 295 switch, 345 surface area, 264 layer structure, 45 states, 2 15 structure, 45 surfactant, 3, 80, 286, 327, 328 oleic acid, 173 susceptibility, Pauli type, 242 suspension, 277 switch azobenzene, 347 catenane, 348, 349 computer, 6 computer technology, 354 electronic, 35 1, 352 molecular, 347 optical, 348 photochemical, 348 rotaxane, 35 1-353 synthesis, divergent, 299 nanoparticle, 97 Ta (tantalum), 99 Teflon, 151, 152 temperature, blocking, 176, 177 tempo, 307, 308 tendon, 311, 316, 324, 325 tensile strength, nanotube, 124, 13 1 tertiary structure, 3 18 tetrahedral site, 1 1, 12 fullerene, 1 11 tetrahydrofuran, 277, 278 tetrahydrothiophene, 277, 278
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INTRODUCTION TO NANOTECHNOLOGY Char
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CONTENTS Preface xi 1 Introduction
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5.2 Carbon Molecules 103 5.2.1 Natu
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9.4 Excitons 244 9.5 Single-Electro
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PREFACE In recent years nanotechnol
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INTRODUCTION The prefix nano in the
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INTRODUCTION 3 he recognized the ex
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1000 (I) a 900 4 800 a 900 I 6 700
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INTRODUCTION 7 developed before the
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2.1. STRUCTURE 9 mechanics, the res
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X T 2.1. STRUCTURE 11 Figure 2.4. C
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2.1. STRUCTURE 13 Figure 2.6. Thirt
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Sodium Nanoparticle Na, Magic Numbe
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2.1. STRUCTURE 17 of the large anio
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2.1. STRUCTURE 19 other, and high-f
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2.2. ENERGY BANDS 21 Conduction Ban
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2.2. ENERGY BANDS 23 Figure 2.13. S
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2.2. ENERGYBANDS 25 band at point T
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A X ' Wavevector A Si c z 2.2. ENER
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2.2. ENERGY BANDS 29 bands of Figs.
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2.3. LOCALIZED PARTICLES 31 add ele
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1 meV 10 meV 100 meV FJ E W 1 eV 10
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3 METHODS OF MEASURING PROPERTIES 3
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3.2. STRUCTURE 37 Table 3.1. Crysta
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3.2. STRUCTURE 39 Figure 3.2. Two-d
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3.2. STRUCTURE 41 The widths of the
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44 METHODS OF MEASURING PROPERTIES
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3.3. MICROSCOPY 51 types of transit
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3.3. MICROSCOPY 53 Actual diverging
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Tunneling current Tunneling current
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3.3. MrCAOSCOPY 57 and the latter m
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3.4. SPECTROSCOPY 59 From Eq. (3.8)
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1 Average Panicle FWHM Size (nm) in
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CdSe colloidal NCs a = 1.2 nrn 3.4.
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El X-RAY TUBE 8000 - A 6000 - 4000
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2 N I w 3.0 2.5 2.0 1.5 1 .o 0.5 3.
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i 3.4. SPECTROSCOPY 69 NMR involves
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T=220K - 2G H FURTHER READING 71 Fi
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NUMBER OF ATOMS RADIUS (nm) 1 10 1
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I L 7 3 5 7 9 11 13 15 17 NUMBER OF
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JELLIUM MODEL OF CLUSTERS ATOMS CLU
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1.02 { 1.01 - 1 - 0.99 - 4.2. METAL
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4.2. METAL NANOCLUSTERS 81 Figure 4
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4.2. METAL NANOCLUSTERS 83 Figure 4
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-0 100 200 300 400 500 600 MASSICHA
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a 42. METAL NANOCLUSTERS 87 Figure
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. . . .. . - . D 111111111111111111
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3 4 2.5 0 cn g 2 0 z d 1.5 t a 9 1
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4.3. SEMICONDUCTING NANOPARTICLES 9
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4.4. RARE GAS AND MOLECULAR CLUSTER
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4.5. METHODS OF SYNTHESIS 97 d Figu
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4.5. METHODS OF SYNTHESIS 99 isopro
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PULSED LASER BEAM 1 1 1 1 1 I ROTAT
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5.1. INTRODUCTION CARBON NANOSTRUCT
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5.2. CARBON MOLECULES 105 methane d
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5.3. CARBON CLUSTERS 107 -0 20 40 6
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PHOTON ENERGY (electron volts) 5.3.
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Figure 5.6. Structure of the CEO fu
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1 30 0 14.1 14.2 14.3 14.4 14.5 LAT
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(c) 5.4. CARBON NANOTUBES 115 Figur
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5.4. CARBON NANOTUBES 1 17 The mech
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5.4. CARBON NANOTUBES 11 9 investig
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5.4. CARBON NANOTUBES 121 energy gr
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5.4. CARBON NANOTUBES 123 stretch c
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5.5. APPLICATIONS OF CARBON NANOTUB
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- v) 450 : 400 3 350 1 300 : 5 250
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BULK NANOSTRUCTURED MATERIALS In th
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h 8 0 6.1. SOLID DISORDERED NANOSTR
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6.1. SOLID DISORDERED NANOSTRUCTURE
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6.2. NANOSTRUCTURED CRYSTALS 153 qu
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6.2. NANOSTRUCTURED CRYSTALS 155 Fi
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158 BULK NANOSTRUCTURED MATERIALS 6
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160 BULK NANOSTRUCTURED MATERIALS w
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162 BULK NANOSTRUCTURED MATERIALS 0
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164 BULK NANOSTRUCTURED MATERIALS n
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166 NANOSTRUCTURED FERROMAGNETISM f
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168 NANOSTRUCTURED FERROMAGNETISM i
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170 NANOSTRUCTURED FERROMAGNETISM M
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172 NANOSTRUCTURED FERROMAGNETISM h
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174 NANOSTRUCTURED FERROMAGNETISM d
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176 NANOSTRUCTURED FERROMAGNETISM o
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4 h $ 3 7.5. NANOCARBON FERROMAGNET
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7.6. GIANT AND COLOSSAL MAGNETORESI
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1.4 N 1 1.2 z " 1 0 v 5 h 0.8 0 0.6
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7.6. GIANT AND COLOSSAL MAGNETORESI
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7.7. FERROFLUIDS 187 Figure 7.22. M
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7.7. FECIROFLUIDS 189 Figure 7.25.
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7.7. FERRQFLUlOS 191 FerroRuids can
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FURTHER READING FURTHER READING 193
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10- IR f IA -1 8.1. INTRODUCTION 19
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8.2. INFRARED FREQUENCY RANGE 197 1
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8.2. INFRARED FREQUENCY RANGE 199 d
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s C CTI e 8 9 4( 8.2. INFRARED FREQ
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8.2.3. Raman Spectroscopy 8.2. INFR
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8.2. INFRARED FREQUENCY RANGE 205 a
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- r I 520 51 8 v 6 516 a" 51 4 51 2
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8.2. INFRARED FREQUENCY RANGE 209 i
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v) - C 3 8 600 400 100 0 e e 10 20
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i E (cm-’ ) 20 c I 1 ID 0 4x107 8
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- ? m v .- - z In C a, c C - .. . .
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Excitatior I [eV]: 2.175 2.214 2.25
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6 100 200 300 Time (ns) 8.3. LUMINE
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400 nm Laser / Free excitons Trappe
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8.4. NANOSTRUCTURES IN ZEOLITE CAGE
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FURTHER READING 225 P. Milani and C
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9.2. PREPARATION OF QUANTUM NANOSTR
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i 9.2. PREPARATION OF QUANTUM NANOS
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9.3. SIZE AND DIMENSIONALITY EFFECT
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w n 3 2 1 9.3. SIZE AND DIMENSIONAL
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WE) Quantum Dot Number of Electrons
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9.5. SINGLE-ELECTRON TUNNELING 245
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9.5. SINGLE-ELECTRON TUNNELING 247
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1 pair section ;- COT. .; . . I. .
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o.6 LWIR: T = 77 K 45" incidence AD
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9.7. SUPERCONDUCTIVITY 253 horizont
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9.7. SUPERCONDUCTIVITY 255 applied
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10.1. SELF-ASSEMBLY 10 SELF-ASSEMBL
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10.1. SELF-ASSEMBLY 259 factor of 2
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(a) (LI (dl 10.1. SELF-ASSEMBLY 261
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10.1. SELF-ASSEMBLY 263 atoms, as n
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- c v) ._ C 3 2 9 40 c - .- e m v w
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10.2. CATALYSIS 267 where the lengt
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10.2. CATALYSIS 269 are also other
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1600 2 1200 t p - Bi2M020, 10.2. CA
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7 - I 2,330 m .- c r 0 2 2,300 - u)
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10.2. CATALYSIS 275 with a top and
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10.2. CATALYSIS 277 based on the pr
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10.2. CATALYSIS 279 CnHlnfl, which
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I1 ORGANIC COMPOUNDS AND POLYMERS 1
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11.2. FORMING AND CHARACTERIZING PO
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1 1.3. NANOCRYSTALS 285 This expres
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-1 5 0) C a, -1 1 000 300 100 30 10
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11.3. NANOCRYSTALS 289 Table 11.1.
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11.3. NANOCRYSTALS 291 R’ groups
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11.4. POLYMERS 293 Figure 11.9. Ske
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11.5. SUPRAMOLECULAR STRUCTURES 295
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M Et3P OTf M=Pd M=Pt M=Pd, 41 % M=P
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11.5. SVPRAMOLECUUAR STRUCTURES 2s
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11 5. SUPRAMOLECULAR STRUCTURES 303
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BiodegradaWe surface 4 Functional g
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FURTHER READING 309 F. J. Owens and
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12.2. BIOLOGICAL BUILDING BLOCKS 31
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314 BIOLOGICAL MATERIALS which we w
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316 BIOLOGICAL MATERIALS Table 12.2
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318 BIOLOGICAL MATERtALS i J / Flgu
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320 BIOLOGICAL MATERIALS Pyrimidine
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322 BlOLMjlCAL MATERiALS (a) DNA do
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324 BIOLOGICAL MATERIALS so each wo
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326 BIOLOGICAL MATERIALS 12.4.2. Mi
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328 BIOLOGICAL MATERIALS tions they
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330 BIOLOGICAL MATERIALS hardened f
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13 NANOMACHINES AND NANODEVICES In
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Page 368 and 369: A.l. INTRODUCTION APPENDIX A FORMUL
Page 370 and 371: A.3. PARTIAL CONFINEMENT 359 limiti
Page 372 and 373: APPENDIX B TABULATIONS OF SEMICONDU
Page 374 and 375: TABULATIONS OF SEMICONDUCTING MATER
Page 376 and 377: Table B.8. Effective masses m+ rela
Page 378 and 379: TABULATIONS OF SEMICONDUCTING MATER
Page 380: TABULATIONS OF SEMICONDUCTING MATER
Page 383 and 384: 372 INDEX amoeba, 3 16 amphiphilic,
Page 385 and 386: 374 INDEX CdS, 9, 130, 213, 216, 36
Page 387 and 388: 376 INDEX dispersion, 277 disulfide
Page 389 and 390: 378 INDEX Ga (gallium) (continued)
Page 391 and 392: 380 INDEX length (continued) critic
Page 393 and 394: 382 INDEX multiple ionization, 93 r
Page 395: 384 INDEX pi-conjugation, 282, 292
Page 399: 388 INDEX wavefimction (continued)
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