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Introduction to Nanotechnology

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9.7. SUPERCONDUCTIVITY 253<br />

horizontal stripe on the figure labeled QD) is a 30-nm-thick GaAs region, and<br />

centered in this region are 12 monolayers of In,,,Ga,,,As quantum dots with a<br />

density of 1.5 x 10'o/cmZ. The inset at the bot<strong>to</strong>m of the figure was drawn <strong>to</strong><br />

represent the details of the waveguide region. The length L, and the width W varied<br />

somewhat from sample <strong>to</strong> sample, with L, = ranging from 1 <strong>to</strong> 5 mm, and W varying<br />

between 4 and 60 pm. The facets or faces of the laser were coated with ZnSe/MgF,<br />

high-reflectivity (> 95%) coatings that reflected the light back and forth inside <strong>to</strong><br />

augment the stimulated emission. The laser light exited through the lateral edge of<br />

the laser.<br />

The laser output power for continuous-wave (CW) operation at room temperature<br />

is plotted in Fig. 9.25 versus the current for the laser dimensions L, = 1.02 mm and<br />

W = 9 pm. The near-infrared output signal at the wavelength of 1.32 pm for a<br />

current setting just above the 4.1-mA threshold value, labeled point a, is shown in<br />

the inset of the figure. The threshold current density increases sharply with the<br />

temperature above 200K, and this is illustrated in Fig. 9.26 for pulsed operation.<br />

9.7. SUPERCONDUCTIVITY<br />

Superconduc<strong>to</strong>rs exhibit some properties that are analogous <strong>to</strong> those of quantum<br />

dots, quantum wires, and quantum wells. This is the case, in part, because their<br />

characteristic length scales ;1 and 5 are in the nanorange, as the representative data in<br />

Table 9.6 indicate. The table also gives the transition temperature T, below which<br />

each material superconducts, that is, has zero electrical resistance. The majority of<br />

the values of i, and 5 listed in the table are 200nm or less, and several are below<br />

6 nm. The penetration depth 2 is a measure of the distance that an externally applied<br />

1<br />

QD Edge Emitter, HR / HR<br />

9 pm x 1020 wm<br />

160 T=295K,CW<br />

0<br />

1.26 1.30 1.34 1.38<br />

Wavelength (pm)<br />

1 I I I I<br />

0 10 20 30 40<br />

Current (mA)<br />

Figure 9.25. Dependence of the near-infrared light output power on the current for a contin-<br />

uous-wave, room-temperature, edge-emitting quantum dot laser of the type illustrated in<br />

Fig. 9.24. [From Park et al. (1999).]

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