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2Gb: x4, x8, x16 DDR3 SDRAM - Micron

2Gb: x4, x8, x16 DDR3 SDRAM - Micron

2Gb: x4, x8, x16 DDR3 SDRAM - Micron

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Input Clock Frequency Change<br />

<strong>2Gb</strong>: <strong>x4</strong>, <strong>x8</strong>, <strong>x16</strong> <strong>DDR3</strong> <strong>SDRAM</strong><br />

Input Clock Frequency Change<br />

When the <strong>DDR3</strong> <strong>SDRAM</strong> is initialized, the clock must be stable during most normal<br />

states of operation. This means that after the clock frequency has been set to the stable<br />

state, the clock period is not allowed to deviate, except for what is allowed by the clock<br />

jitter and spread spectrum clocking (SSC) specifications.<br />

The input clock frequency can be changed from one stable clock rate to another under<br />

two conditions: self refresh mode and precharge power-down mode. It is illegal to<br />

change the clock frequency outside of those two modes. For the self refresh mode condition,<br />

when the <strong>DDR3</strong> <strong>SDRAM</strong> has been successfully placed into self refresh mode and<br />

tCKSRE has been satisfied, the state of the clock becomes a “Don’t Care.” When the<br />

clock becomes a “Don’t Care,” changing the clock frequency is permissible if the new<br />

clock frequency is stable prior to tCKSRX. When entering and exiting self refresh mode<br />

for the sole purpose of changing the clock frequency, the self refresh entry and exit<br />

specifications must still be met.<br />

The precharge power-down mode condition is when the <strong>DDR3</strong> <strong>SDRAM</strong> is in precharge<br />

power-down mode (either fast exit mode or slow exit mode). Either ODT must be at a<br />

logic LOW or RTT,nom and RTT(WR) must be disabled via MR1 and MR2. This ensures<br />

RTT,nom and RTT(WR) are in an off state prior to entering precharge power-down mode,<br />

and CKE must be at a logic LOW. A minimum of tCKSRE must occur after CKE goes LOW<br />

before the clock frequency can change. The <strong>DDR3</strong> <strong>SDRAM</strong> input clock frequency is allowed<br />

to change only within the minimum and maximum operating frequency specified<br />

for the particular speed grade ( tCK [AVG] MIN to tCK [AVG] MAX). During the input<br />

clock frequency change, CKE must be held at a stable LOW level. When the input clock<br />

frequency is changed, a stable clock must be provided to the DRAM tCKSRX before precharge<br />

power-down may be exited. After precharge power-down is exited and tXP has<br />

been satisfied, the DLL must be reset via the MRS. Depending on the new clock frequency,<br />

additional MRS commands may need to be issued. During the DLL lock time,<br />

RTT,nom and RTT(WR) must remain in an off state. After the DLL lock time, the DRAM is<br />

ready to operate with a new clock frequency.<br />

PDF: 09005aef826aaadc<br />

<strong>2Gb</strong>_<strong>DDR3</strong>_<strong>SDRAM</strong>.pdf – Rev. P 2/12 EN 125 <strong>Micron</strong> Technology, Inc. reserves the right to change products or specifications without notice.<br />

� 2006 <strong>Micron</strong> Technology, Inc. All rights reserved.

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