2Gb: x4, x8, x16 DDR3 SDRAM - Micron

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PDF: 09005aef826aaadc Micron Technology, Inc. reserves the right to change products or specifications without notice. 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 80 � 2006 Micron Technology, Inc. All rights reserved. Table 57: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1–8 apply to the entire table DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes READ-to-PRECHARGE time tRTP MIN = greater of 4CK or 7.5ns; MAX = n/a CK 31, 32 CAS#-to-CAS# command delay tCCD MIN = 4CK; MAX = n/a CK Auto precharge write recovery + precharge time tDAL MIN = WR + tRP/ tCK (AVG); MAX = n/a CK MODE REGISTER SET command cycle time tMRD MIN = 4CK; MAX = n/a CK MODE REGISTER SET command update delay tMOD MIN = greater of 12CK or 15ns; MAX = n/a CK MULTIPURPOSE REGISTER READ burst end to mode register set for multipurpose register exit tMPRR MIN = 1CK; MAX = n/a Calibration Timing CK ZQCL command: Long POWER-UP and RE- tZQinit 512 – 512 – 512 – 512 – CK calibration time SET operation Normal operation tZQoper 256 – 256 – 256 – 256 – CK ZQCS command: Short calibration time tZQCS 64 – 64 – 64 – 64 – CK Exit reset from CKE HIGH to a valid command tXPR Initialization and Reset Timing MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK Begin power supply ramp to power supplies stable tVDDPR MIN = n/a; MAX = 200 ms RESET# LOW to power supplies stable tRPS MIN = 0; MAX = 200 ms RESET# LOW to I/O and RTT High-Z tIOZ MIN = n/a; MAX = 20 Refresh Timing ns 35 REFRESH-to-ACTIVATE or REFRESH tRFC – 1Gb MIN = 110; MAX = 70,200 ns command period tRFC – 2Gb MIN = 160; MAX = 70,200 ns tRFC – 4Gb MIN = 260; MAX = 70,200 ns tRFC – 8Gb MIN = 350; MAX = 70,200 ns Maximum refresh period Maximum average periodic refresh TC � 85°C – 64 (1X) ms 36 TC > 85°C 32 (2X) ms 36 TC � 85°C tREFI 7.8 (64ms/8192) μs 36 TC > 85°C 3.9 (32ms/8192) μs 36 Self Refresh Timing 2Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions
PDF: 09005aef826aaadc Micron Technology, Inc. reserves the right to change products or specifications without notice. 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 81 � 2006 Micron Technology, Inc. All rights reserved. Table 57: Electrical Characteristics and AC Operating Conditions (Continued) Notes 1–8 apply to the entire table DDR3-800 DDR3-1066 DDR3-1333 DDR3-1600 Parameter Symbol Min Max Min Max Min Max Min Max Unit Notes Exit self refresh to commands not requiring a locked DLL tXS MIN = greater of 5CK or tRFC + 10ns; MAX = n/a CK Exit self refresh to commands requiring a locked DLL tXSDLL MIN = tDLLK (MIN); MAX = n/a CK 28 Minimum CKE low pulse width for self refresh entry to self refresh exit timing tCKESR MIN = tCKE (MIN) + CK; MAX = n/a CK Valid clocks after self refresh entry or powerdown entry tCKSRE MIN = greater of 5CK or 10ns; MAX = n/a CK Valid clocks before self refresh exit, power-down exit, or reset exit tCKSRX MIN = greater of 5CK or 10ns; MAX = n/a Power-Down Timing CK CKE MIN pulse width tCKE (MIN) Greater of 3CK Greater of 3CK Greater of 3CK Greater of 3CK CK or 7.5ns or 5.625ns or 5.625ns or 5ns Command pass disable delay tCPDED MIN = 1; MAX = n/a CK Power-down entry to power-down exit timing tPD MIN = tCKE (MIN); MAX = 9 * tREFI CK Begin power-down period prior to CKE registered HIGH tANPD WL - 1CK CK Power-down entry period: ODT either synchronous or asynchronous PDE Greater of tANPD or tRFC - REFRESH command to CKE LOW time CK Power-down exit period: ODT either synchronous or asynchronous PDX tANPD + tXPDLL CK Power-Down Entry Minimum Timing ACTIVATE command to power-down entry tACTPDEN MIN = 1 CK PRECHARGE/PRECHARGE ALL command to power-down entry tPRPDEN MIN = 1 CK REFRESH command to power-down entry tREFPDEN MIN = 1 CK 37 MRS command to power-down entry tMRSPDEN MIN = tMOD (MIN) CK READ/READ with auto precharge command to power-down entry tRDPDEN MIN = RL + 4 + 1 CK WRITE command to BL8 (OTF, MRS) tWRPDEN MIN = WL + 4 + tWR/ tCK (AVG) CK power-down entry BC4OTF BC4MRS tWRPDEN MIN = WL + 2 + tWR/ tCK (AVG) CK 2Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics and AC Operating Conditions
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DDR3 SDRAM MT41J512M4 - 64 Meg x 4
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2Gb: x4, x8, x16 DDR3 SDRAM Feature
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State Diagram Figure 2: Simplified
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2Gb: x4, x8, x16 DDR3 SDRAM Functio
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Figure 4: 256 Meg x 8 Functional Bl
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Figure 7: 96-Ball FBGA - x16 (Top V
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Table 3: 78-Ball FBGA - x4, x8 Ball
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Table 4: 96-Ball FBGA - x16 Ball De
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Figure 9: 78-Ball FBGA - x4, x8 (HX
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Figure 11: 96-Ball FBGA - x16 (JT)
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Input/Output Capacitance Table 6: D
Page 29 and 30: Figure 12: Thermal Measurement Poin
Page 31 and 32: Table 9: I DD0 Measurement Loop CK,
Page 33 and 34: 2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 35 and 36: Table 14: I DD4R Measurement Loop C
Page 37 and 38: Table 16: I DD5B Measurement Loop C
Page 39 and 40: Table 18: I DD7 Measurement Loop CK
Page 41 and 42: Electrical Characteristics - I DD S
Page 43 and 44: Table 21: I DD Maximum Limits - Die
Page 45 and 46: Electrical Specifications - DC and
Page 47 and 48: Figure 13: Input Signal 0.925V 0.85
Page 49 and 50: Table 28: Differential Input Operat
Page 51 and 52: Figure 18: Definition of Differenti
Page 53 and 54: Figure 19: Nominal Slew Rate Defini
Page 55 and 56: ODT Characteristics Figure 21: ODT
Page 57 and 58: Table 33: R TT Effective Impedances
Page 59 and 60: Figure 23: t AON and t AOF Definiti
Page 61 and 62: Output Driver Impedance Figure 26:
Page 63 and 64: 34 Ohm Driver The 34� driver’s
Page 65 and 66: Alternative 40 Ohm Driver Table 45:
Page 67 and 68: Output Characteristics and Operatin
Page 69 and 70: Figure 28: Differential Output Sign
Page 71 and 72: Slew Rate Definitions for Different
Page 73 and 74: Table 53: DDR3-1333 Speed Bins DDR3
Page 75 and 76: Table 55: DDR3-1866 Speed Bins DDR3
Page 77 and 78: PDF: 09005aef826aaadc Micron Techno
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Page 97 and 98: 2Gb: x4, x8, x16 DDR3 SDRAM Command
Page 99 and 100: Table 62: Derating Values for t IS/
Page 101 and 102: Figure 32: Nominal Slew Rate and t
Page 103 and 104: Figure 34: Tangent Line for t IS (C
Page 105 and 106: Data Setup, Hold, and Derating 2Gb:
Page 107 and 108: Table 68: Derating Values for t DS/
Page 109 and 110: 2Gb: x4, x8, x16 DDR3 SDRAM Data Se
Page 111 and 112: Figure 37: Nominal Slew Rate for t
Page 113 and 114: Figure 39: Tangent Line for t DH (D
Page 115 and 116: 2Gb: x4, x8, x16 DDR3 SDRAM Command
Page 117 and 118: Commands DESELECT NO OPERATION ZQ C
Page 119 and 120: PRECHARGE REFRESH 2Gb: x4, x8, x16
Page 121 and 122: DLL Disable Mode • All other self
Page 123 and 124: Figure 42: DLL Disable Mode to DLL
Page 125 and 126: Input Clock Frequency Change 2Gb: x
Page 127 and 128: Write Leveling Figure 45: Write Lev
Page 129 and 130: Write Leveling Procedure 2Gb: x4, x
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Write Leveling Mode Exit Procedure
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Figure 48: Initialization Sequence
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Figure 50: MRS to nonMRS Command Ti
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Table 77: Burst Order Burst Length
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Mode Register 1 (MR1) Figure 53: Mo
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On-Die Termination (ODT) WRITE LEVE
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Mode Register 2 (MR2) Figure 55: Mo
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SRT versus ASR 2Gb: x4, x8, x16 DDR
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Figure 58: MPR Block Diagram Memory
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PDF: 09005aef826aaadc Micron Techno
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MPR Read Predefined Pattern The pre
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ACTIVATE Operation Before any READ
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READ Operation Figure 66: READ Late
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2Gb: x4, x8, x16 DDR3 SDRAM READ Op
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Figure 77: Data Strobe Timing - REA
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Figure 80: t RPST Timing CK CK# DQS
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Figure 81: t WPRE Timing Figure 82:
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Figure 90: WRITE (BL8) to PRECHARGE
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Figure 93: Data Input Timing DQS, D
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Figure 94: Self Refresh Entry/Exit
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Power-Down Mode Power-down is synch
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Figure 95: Active Power-Down Entry
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Figure 98: Power-Down Entry After R
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Figure 102: ACTIVATE to Power-Down
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RESET Operation 2Gb: x4, x8, x16 DD
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On-Die Termination (ODT) Figure 107
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Dynamic ODT Dynamic ODT Special Use
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Table 89: Mode Registers for R TT(W
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Synchronous ODT Mode ODT Latency an
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2Gb: x4, x8, x16 DDR3 SDRAM - Micron

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