2Gb: x4, x8, x16 DDR3 SDRAM - Micron

More documents

Recommendations

Info

Table 18: I DD7 Measurement Loop (Continued) CK, CK# Toggling CKE Static HIGH Sub-Loop Cycle Number Command CS# RAS# 16 3 × nFAW + nRRD Repeat sub-loop 11, use BA[2:0] = 5 17 3 × nFAW + 2 × nRRD Repeat sub-loop 10, use BA[2:0] = 6 18 3 × nFAW + 3 × nRRD Repeat sub-loop 11, use BA[2:0] = 7 19 2Gb: x4, x8, x16 DDR3 SDRAM Electrical Specifications – I DD Specifications and Conditions CAS# WE# 3 × nFAW + 4 × nRRD D 1 0 0 0 0 7 0 0 0 0 0 – 3 × nFAW + 4 × nRRD + 1 Repeat cycle 3 × nFAW + 4 × nRRD until 4 × nFAW - 1, if needed Notes: 1. DQ, DQS, DQS# are midlevel unless driven as required by the RD command. 2. DM is LOW. 3. Burst sequence is driven on each DQ signal by the RD command. 4. AL = CL-1. PDF: 09005aef826aaadc 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2006 Micron Technology, Inc. All rights reserved. ODT BA[2:0] A[15:11] A[10] A[9:7] A[6:3] A[2:0] Data 3
Electrical Characteristics – I DD Specifications Table 19: I DD Maximum Limits – Die Rev D 2Gb: x4, x8, x16 DDR3 SDRAM Electrical Characteristics – I DD Specifications I DD values are for full operating range of voltage and temperature unless otherwise noted. IDD Speed Bin Width DDR3-1066 DDR3-1333 DDR3-1600 DDR3-1866 Unit Notes IDD0 x4 75 85 95 105 mA 1, 2 x8 75 85 95 105 mA x16 90 100 110 120 mA IDD1 x4 95 100 105 110 mA 1, 2 x8 95 100 105 110 mA x16 125 130 135 140 mA IDD2P0 (Slow) All 12 12 12 12 mA 1, 2 IDD2P1 (Fast) x4, x8 25 30 35 40 mA 1, 2 x16 30 35 40 45 mA IDD2Q All 30 35 40 45 mA 1, 2 IDD2N All 32 37 42 47 mA 1, 2 IDD2NT x4, x8 40 45 50 55 mA 1, 2 x16 55 60 65 70 mA IDD3P x4, x8 30 35 40 45 mA 1, 2 x16 35 40 45 50 mA IDD3N All 35 40 45 50 mA 1, 2 IDD4R x4 125 145 165 185 mA 1, 2 x8 140 160 180 200 mA x16 200 245 270 295 mA IDD4W x4 135 155 170 190 mA 1, 2 x8 145 165 185 205 mA x16 210 255 280 315 mA IDD5B All 190 200 215 220 mA 1, 2 IDD6 All 12 12 12 12 mA 1, 2, 3 IDD6ET All 15 15 15 15 mA 2, 4 IDD7 x4 335 385 435 485 mA 1, 2 x8 335 385 435 485 mA x16 375 425 475 525 mA IDD8 All IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA IDD2P0 + 2mA mA 1, 2 Notes: 1. T C = 85°C; SRT and ASR are disabled. 2. Enabling ASR could increase I DDx by up to an additional 2mA. 3. Restricted to T C MAX = 85°C. 4. T C = 85°C; ASR and ODT are disabled; SRT is enabled. PDF: 09005aef826aaadc 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 41 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2006 Micron Technology, Inc. All rights reserved.
Page 1 and 2: DDR3 SDRAM MT41J512M4 - 64 Meg x 4
Page 3 and 4: 2Gb: x4, x8, x16 DDR3 SDRAM Feature
Page 11 and 12: State Diagram Figure 2: Simplified
Page 13 and 14: 2Gb: x4, x8, x16 DDR3 SDRAM Functio
Page 15 and 16: Figure 4: 256 Meg x 8 Functional Bl
Page 17 and 18: Figure 7: 96-Ball FBGA - x16 (Top V
Page 19 and 20: Table 3: 78-Ball FBGA - x4, x8 Ball
Page 21 and 22: Table 4: 96-Ball FBGA - x16 Ball De
Page 23 and 24: Figure 9: 78-Ball FBGA - x4, x8 (HX
Page 25 and 26: Figure 11: 96-Ball FBGA - x16 (JT)
Page 27 and 28: Input/Output Capacitance Table 6: D
Page 29 and 30: Figure 12: Thermal Measurement Poin
Page 31 and 32: Table 9: I DD0 Measurement Loop CK,
Page 33 and 34: 2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 35 and 36: Table 14: I DD4R Measurement Loop C
Page 37 and 38: Table 16: I DD5B Measurement Loop C
Page 39: Table 18: I DD7 Measurement Loop CK
Page 43 and 44: Table 21: I DD Maximum Limits - Die
Page 45 and 46: Electrical Specifications - DC and
Page 47 and 48: Figure 13: Input Signal 0.925V 0.85
Page 49 and 50: Table 28: Differential Input Operat
Page 51 and 52: Figure 18: Definition of Differenti
Page 53 and 54: Figure 19: Nominal Slew Rate Defini
Page 55 and 56: ODT Characteristics Figure 21: ODT
Page 57 and 58: Table 33: R TT Effective Impedances
Page 59 and 60: Figure 23: t AON and t AOF Definiti
Page 61 and 62: Output Driver Impedance Figure 26:
Page 63 and 64: 34 Ohm Driver The 34� driver’s
Page 65 and 66: Alternative 40 Ohm Driver Table 45:
Page 67 and 68: Output Characteristics and Operatin
Page 69 and 70: Figure 28: Differential Output Sign
Page 71 and 72: Slew Rate Definitions for Different
Page 73 and 74: Table 53: DDR3-1333 Speed Bins DDR3
Page 75 and 76: Table 55: DDR3-1866 Speed Bins DDR3
Page 77 and 78: PDF: 09005aef826aaadc Micron Techno
Page 85 and 86: 2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 91 and 92:
PDF: 09005aef826aaadc Micron Techno
Page 93 and 94:
Page 95 and 96:
2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 97 and 98:
2Gb: x4, x8, x16 DDR3 SDRAM Command
Page 99 and 100:
Table 62: Derating Values for t IS/
Page 101 and 102:
Figure 32: Nominal Slew Rate and t
Page 103 and 104:
Figure 34: Tangent Line for t IS (C
Page 105 and 106:
Data Setup, Hold, and Derating 2Gb:
Page 107 and 108:
Table 68: Derating Values for t DS/
Page 109 and 110:
2Gb: x4, x8, x16 DDR3 SDRAM Data Se
Page 111 and 112:
Figure 37: Nominal Slew Rate for t
Page 113 and 114:
Figure 39: Tangent Line for t DH (D
Page 115 and 116:
2Gb: x4, x8, x16 DDR3 SDRAM Command
Page 117 and 118:
Commands DESELECT NO OPERATION ZQ C
Page 119 and 120:
PRECHARGE REFRESH 2Gb: x4, x8, x16
Page 121 and 122:
DLL Disable Mode • All other self
Page 123 and 124:
Figure 42: DLL Disable Mode to DLL
Page 125 and 126:
Input Clock Frequency Change 2Gb: x
Page 127 and 128:
Write Leveling Figure 45: Write Lev
Page 129 and 130:
Write Leveling Procedure 2Gb: x4, x
Page 131 and 132:
Write Leveling Mode Exit Procedure
Page 133 and 134:
Figure 48: Initialization Sequence
Page 135 and 136:
Figure 50: MRS to nonMRS Command Ti
Page 137 and 138:
Table 77: Burst Order Burst Length
Page 139 and 140:
Mode Register 1 (MR1) Figure 53: Mo
Page 141 and 142:
On-Die Termination (ODT) WRITE LEVE
Page 143 and 144:
Mode Register 2 (MR2) Figure 55: Mo
Page 145 and 146:
SRT versus ASR 2Gb: x4, x8, x16 DDR
Page 147 and 148:
Figure 58: MPR Block Diagram Memory
Page 149 and 150:
Page 151 and 152:
Page 153 and 154:
MPR Read Predefined Pattern The pre
Page 155 and 156:
ACTIVATE Operation Before any READ
Page 157 and 158:
READ Operation Figure 66: READ Late
Page 159 and 160:
Page 161 and 162:
Page 163 and 164:
2Gb: x4, x8, x16 DDR3 SDRAM READ Op
Page 165 and 166:
Figure 77: Data Strobe Timing - REA
Page 167 and 168:
Figure 80: t RPST Timing CK CK# DQS
Page 169 and 170:
Figure 81: t WPRE Timing Figure 82:
Page 171 and 172:
Page 173 and 174:
Page 175 and 176:
Figure 90: WRITE (BL8) to PRECHARGE
Page 177 and 178:
Figure 93: Data Input Timing DQS, D
Page 179 and 180:
Figure 94: Self Refresh Entry/Exit
Page 181 and 182:
Power-Down Mode Power-down is synch
Page 183 and 184:
Figure 95: Active Power-Down Entry
Page 185 and 186:
Figure 98: Power-Down Entry After R
Page 187 and 188:
Figure 102: ACTIVATE to Power-Down
Page 189 and 190:
RESET Operation 2Gb: x4, x8, x16 DD
Page 191 and 192:
On-Die Termination (ODT) Figure 107
Page 193 and 194:
Dynamic ODT Dynamic ODT Special Use
Page 195 and 196:
Table 89: Mode Registers for R TT(W
Page 197 and 198:
Page 199 and 200:
Synchronous ODT Mode ODT Latency an
Page 201 and 202:
Page 203 and 204:
Page 205 and 206:
Page 207 and 208:
Page 209 and 210:
Page 211 and 212:
show all

2Gb: x4, x8, x16 DDR3 SDRAM - Micron

Create successful ePaper yourself

Delete template?

Save as template?