2Gb: x4, x8, x16 DDR3 SDRAM - Micron
2Gb: x4, x8, x16 DDR3 SDRAM - Micron
2Gb: x4, x8, x16 DDR3 SDRAM - Micron
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Alternative 40 Ohm Driver<br />
Table 45: 40 Ohm Driver Impedance Characteristics<br />
MR1[5,1] RON Resistor VOUT Min Nom Max Unit<br />
0,0 ��� RON40(PD) 0.2 × VDDQ 0.6 1.0 1.1 RZQ/6<br />
0.5 × VDDQ 0.9 1.0 1.1 RZQ/6<br />
0.8 × VDDQ 0.9 1.0 1.4 RZQ/6<br />
RON40(PU) 0.2 × VDDQ 0.9 1.0 1.4 RZQ/6<br />
0.5 × VDDQ 0.9 1.0 1.1 RZQ/6<br />
0.8 × VDDQ 0.6 1.0 1.1 RZQ/6<br />
Pull-up/pull-down mismatch (MMPUPD) 0.5 × VDDQ –10% n/a 10 %<br />
Notes: 1. Tolerance limits assume RZQ of 240��±1% and are applicable after proper ZQ calibration<br />
has been performed at a stable temperature and voltage (VDDQ = VDD; VSSQ = VSS). Refer to 40 Ohm Output Driver Sensitivity (page 65) if either the temperature or the<br />
voltage changes after calibration.<br />
2. Measurement definition for mismatch between pull-up and pull-down (MMPUPD). Measure<br />
both RON(PU) and RON(PD) at 0.5 × VDDQ: RON(PU) - RON(PD) MMPUPD =<br />
× 100<br />
RON,nom 40 Ohm Output Driver Sensitivity<br />
3. For IT and AT (1Gb only) devices, the minimum values are derated by 6% when the device<br />
operates between –40°C and 0°C (T C).<br />
If either the temperature or the voltage changes after I/O calibration, then the tolerance<br />
limits listed in Table 45 can be expected to widen according to Table 46 and Table 47<br />
(page 66).<br />
Table 46: 40 Ohm Output Driver Sensitivity Definition<br />
<strong>2Gb</strong>: <strong>x4</strong>, <strong>x8</strong>, <strong>x16</strong> <strong>DDR3</strong> <strong>SDRAM</strong><br />
Output Driver Impedance<br />
Symbol Min Max Unit<br />
RON(PD) @ 0.2 × VDDQ 0.6 - dRONdTL × |�T| - dRONdVL × |�V| 1.1 + dRONdTL × |�T| + dRONdVL × |�V| RZQ/6<br />
RON(PD) @ 0.5 × VDDQ 0.9 - dRONdTM × |�T| - dRONdVM × |�V| 1.1 + dRONdTM × |�T| + dRONdVM × |�V| RZQ/6<br />
RON(PD) @ 0.8 × VDDQ 0.9 - dRONdTH × |�T| - dRONdVH × |�V| 1.4 + dRONdTH × |�T| + dRONdVH × |�V| RZQ/6<br />
RON(PU) @ 0.2 × VDDQ 0.9 - dRONdTL × |�T| - dRONdVL × |�V| 1.4 + dRONdTL × |�T| + dRONdVL × |�V| RZQ/6<br />
RON(PU) @ 0.5 × VDDQ 0.9 - dRONdTM × |�T| - dRONdVM × |�V| 1.1 + dRONdTM × |�T| + dRONdVM × |�V| RZQ/6<br />
RON(PU) @ 0.8 × VDDQ 0.6 - dRONdTH × |�T| - dRONdVH × |�V| 1.1 + dRONdTH × |�T| + dRONdVH × |�V| RZQ/6<br />
Note: 1. �T = T - T (@CALIBRATION)���V = V DDQ - V DDQ(@CALIBRATION); and V DD = V DDQ.<br />
PDF: 09005aef826aaadc<br />
<strong>2Gb</strong>_<strong>DDR3</strong>_<strong>SDRAM</strong>.pdf – Rev. P 2/12 EN 65 <strong>Micron</strong> Technology, Inc. reserves the right to change products or specifications without notice.<br />
� 2006 <strong>Micron</strong> Technology, Inc. All rights reserved.