2Gb: x4, x8, x16 DDR3 SDRAM - Micron

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2Gb: x4, x8, x16 DDR3 SDRAM Output Driver Impedance Table 47: 40 Ohm Output Driver Voltage and Temperature Sensitivity Change Min Max Unit dRONdTM 0 1.5 %/°C dRONdVM 0 0.15 %/mV dRONdTL 0 1.5 %/°C dRONdVL 0 0.15 %/mV dRONdTH 0 1.5 %/°C dRONdVH 0 0.15 %/mV PDF: 09005aef826aaadc 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 66 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2006 Micron Technology, Inc. All rights reserved.
Output Characteristics and Operating Conditions The DRAM uses both single-ended and differential output drivers. The single-ended output driver is summarized below, while the differential output driver is summarized in Table 49 (page 68). Table 48: Single-Ended Output Driver Characteristics 2Gb: x4, x8, x16 DDR3 SDRAM Output Characteristics and Operating Conditions All voltages are referenced to VSS Parameter/Condition Symbol Min Max Unit Notes Output leakage current: DQ are disabled; 0V � VOUT � VDDQ; ODT is disabled; ODT is HIGH IOZ –5 5 μA 1 Output slew rate: Single-ended; For rising and falling edges, measure between VOL(AC) = VREF - 0.1 × VDDQ and VOH(AC) = VREF + 0.1 × VDDQ SRQse 2.5 6 V/ns 1, 2, 3, 4 Single-ended DC high-level output voltage VOH(DC) 0.8 × VDDQ V 1, 2, 5 Single-ended DC mid-point level output voltage VOM(DC) 0.5 × VDDQ V 1, 2, 5 Single-ended DC low-level output voltage VOL(DC) 0.2 × VDDQ V 1, 2, 5 Single-ended AC high-level output voltage VOH(AC) VTT + 0.1 × VDDQ V 1, 2, 3, 6 Single-ended AC low-level output voltage VOL(AC) VTT - 0.1 × VDDQ V 1, 2, 3, 6 Delta RON between pull-up and pull-down for DQ/DQS MMPUPD –10 10 % 1, 7 Test load for AC timing and output slew rates Output to VTT (VDDQ/2) via 25� resistor 3 Notes: 1. RZQ of 240��±1% with RZQ/7 enabled (default 34� driver) and is applicable after proper ZQ calibration has been performed at a stable temperature and voltage (V DDQ = V DD; V SSQ = V SS). 2. V TT = V DDQ/2. 3. See Figure 29 (page 69) for the test load configuration. 4. The 6 V/ns maximum is applicable for a single DQ signal when it is switching either from HIGH to LOW or LOW to HIGH while the remaining DQ signals in the same byte lane are either all static or all switching in the opposite direction. For all other DQ signal switching combinations, the maximum limit of 6 V/ns is reduced to 5 V/ns. 5. See Table 38 (page 62) for IV curve linearity. Do not use AC test load. 6. See Table 50 (page 70) for output slew rate. 7. See Table 38 (page 62) for additional information. 8. See Figure 27 (page 68) for an example of a single-ended output signal. PDF: 09005aef826aaadc 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 67 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2006 Micron Technology, Inc. All rights reserved.
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DDR3 SDRAM MT41J512M4 - 64 Meg x 4
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2Gb: x4, x8, x16 DDR3 SDRAM Feature
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State Diagram Figure 2: Simplified
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2Gb: x4, x8, x16 DDR3 SDRAM Functio
Page 15 and 16: Figure 4: 256 Meg x 8 Functional Bl
Page 17 and 18: Figure 7: 96-Ball FBGA - x16 (Top V
Page 19 and 20: Table 3: 78-Ball FBGA - x4, x8 Ball
Page 21 and 22: Table 4: 96-Ball FBGA - x16 Ball De
Page 23 and 24: Figure 9: 78-Ball FBGA - x4, x8 (HX
Page 25 and 26: Figure 11: 96-Ball FBGA - x16 (JT)
Page 27 and 28: Input/Output Capacitance Table 6: D
Page 29 and 30: Figure 12: Thermal Measurement Poin
Page 31 and 32: Table 9: I DD0 Measurement Loop CK,
Page 33 and 34: 2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 35 and 36: Table 14: I DD4R Measurement Loop C
Page 37 and 38: Table 16: I DD5B Measurement Loop C
Page 39 and 40: Table 18: I DD7 Measurement Loop CK
Page 41 and 42: Electrical Characteristics - I DD S
Page 43 and 44: Table 21: I DD Maximum Limits - Die
Page 45 and 46: Electrical Specifications - DC and
Page 47 and 48: Figure 13: Input Signal 0.925V 0.85
Page 49 and 50: Table 28: Differential Input Operat
Page 51 and 52: Figure 18: Definition of Differenti
Page 53 and 54: Figure 19: Nominal Slew Rate Defini
Page 55 and 56: ODT Characteristics Figure 21: ODT
Page 57 and 58: Table 33: R TT Effective Impedances
Page 59 and 60: Figure 23: t AON and t AOF Definiti
Page 61 and 62: Output Driver Impedance Figure 26:
Page 63 and 64: 34 Ohm Driver The 34� driver’s
Page 65: Alternative 40 Ohm Driver Table 45:
Page 69 and 70: Figure 28: Differential Output Sign
Page 71 and 72: Slew Rate Definitions for Different
Page 73 and 74: Table 53: DDR3-1333 Speed Bins DDR3
Page 75 and 76: Table 55: DDR3-1866 Speed Bins DDR3
Page 77 and 78: PDF: 09005aef826aaadc Micron Techno
Page 97 and 98: 2Gb: x4, x8, x16 DDR3 SDRAM Command
Page 99 and 100: Table 62: Derating Values for t IS/
Page 101 and 102: Figure 32: Nominal Slew Rate and t
Page 103 and 104: Figure 34: Tangent Line for t IS (C
Page 105 and 106: Data Setup, Hold, and Derating 2Gb:
Page 107 and 108: Table 68: Derating Values for t DS/
Page 109 and 110: 2Gb: x4, x8, x16 DDR3 SDRAM Data Se
Page 111 and 112: Figure 37: Nominal Slew Rate for t
Page 113 and 114: Figure 39: Tangent Line for t DH (D
Page 115 and 116: 2Gb: x4, x8, x16 DDR3 SDRAM Command
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Commands DESELECT NO OPERATION ZQ C
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PRECHARGE REFRESH 2Gb: x4, x8, x16
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DLL Disable Mode • All other self
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Figure 42: DLL Disable Mode to DLL
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Input Clock Frequency Change 2Gb: x
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Write Leveling Figure 45: Write Lev
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Write Leveling Procedure 2Gb: x4, x
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Write Leveling Mode Exit Procedure
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Figure 48: Initialization Sequence
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Figure 50: MRS to nonMRS Command Ti
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Table 77: Burst Order Burst Length
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Mode Register 1 (MR1) Figure 53: Mo
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On-Die Termination (ODT) WRITE LEVE
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Mode Register 2 (MR2) Figure 55: Mo
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SRT versus ASR 2Gb: x4, x8, x16 DDR
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Figure 58: MPR Block Diagram Memory
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PDF: 09005aef826aaadc Micron Techno
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MPR Read Predefined Pattern The pre
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ACTIVATE Operation Before any READ
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READ Operation Figure 66: READ Late
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2Gb: x4, x8, x16 DDR3 SDRAM READ Op
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Figure 77: Data Strobe Timing - REA
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Figure 80: t RPST Timing CK CK# DQS
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Figure 81: t WPRE Timing Figure 82:
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Figure 90: WRITE (BL8) to PRECHARGE
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Figure 93: Data Input Timing DQS, D
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Figure 94: Self Refresh Entry/Exit
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Power-Down Mode Power-down is synch
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Figure 95: Active Power-Down Entry
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Figure 98: Power-Down Entry After R
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Figure 102: ACTIVATE to Power-Down
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RESET Operation 2Gb: x4, x8, x16 DD
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On-Die Termination (ODT) Figure 107
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Dynamic ODT Dynamic ODT Special Use
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Table 89: Mode Registers for R TT(W
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Synchronous ODT Mode ODT Latency an
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2Gb: x4, x8, x16 DDR3 SDRAM - Micron

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