2Gb: x4, x8, x16 DDR3 SDRAM - Micron

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Thermal Characteristics Table 7: Thermal Characteristics Parameter/Condition Value Unit Symbol Notes Operating case temperature - Commercial Operating case temperature - Industrial Operating case temperature - Automotive Junction-to-case (TOP) 0 to +85 °C TC 1, 2, 3 0 to +95 °C TC 1, 2, 3, 4 -40 to +85 °C TC 1, 2, 3 -40 to +95 °C TC 1, 2, 3, 4 -40 to +85 °C TC 1, 2, 3 -40 to +105 °C TC 1, 2, 3, 4 96-ball (JT) 6.5 °C/W �JC 5 96-ball (HA) 3.9 78-ball (DA) M, K 6.5 78-ball (HX) 3.9 2Gb: x4, x8, x16 DDR3 SDRAM Thermal Characteristics Notes: 1. Maximum operating case temperature. T C is measured in the center of the package. 2. A thermal solution must be designed to ensure the DRAM device does not exceed T C MAX during operation. 3. Device functionality is not guaranteed if the DRAM device exceeds T C MAX during operation. 4. If T C exceeds 85°C, the DRAM must be refreshed externally at 2x refresh, which is a 3.9μs interval refresh rate. The use of SRT or ASR (if available) must be enabled. 5. Thermal resistance data is based on a number of samples from multiple lots and should be viewed as a typical number. PDF: 09005aef826aaadc 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2006 Micron Technology, Inc. All rights reserved.
Figure 12: Thermal Measurement Point � �� 2Gb: x4, x8, x16 DDR3 SDRAM Thermal Characteristics � � �� PDF: 09005aef826aaadc 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2006 Micron Technology, Inc. All rights reserved.
Page 1 and 2: DDR3 SDRAM MT41J512M4 - 64 Meg x 4
Page 3 and 4: 2Gb: x4, x8, x16 DDR3 SDRAM Feature
Page 11 and 12: State Diagram Figure 2: Simplified
Page 13 and 14: 2Gb: x4, x8, x16 DDR3 SDRAM Functio
Page 15 and 16: Figure 4: 256 Meg x 8 Functional Bl
Page 17 and 18: Figure 7: 96-Ball FBGA - x16 (Top V
Page 19 and 20: Table 3: 78-Ball FBGA - x4, x8 Ball
Page 21 and 22: Table 4: 96-Ball FBGA - x16 Ball De
Page 23 and 24: Figure 9: 78-Ball FBGA - x4, x8 (HX
Page 25 and 26: Figure 11: 96-Ball FBGA - x16 (JT)
Page 27: Input/Output Capacitance Table 6: D
Page 31 and 32: Table 9: I DD0 Measurement Loop CK,
Page 33 and 34: 2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 35 and 36: Table 14: I DD4R Measurement Loop C
Page 37 and 38: Table 16: I DD5B Measurement Loop C
Page 39 and 40: Table 18: I DD7 Measurement Loop CK
Page 41 and 42: Electrical Characteristics - I DD S
Page 43 and 44: Table 21: I DD Maximum Limits - Die
Page 45 and 46: Electrical Specifications - DC and
Page 47 and 48: Figure 13: Input Signal 0.925V 0.85
Page 49 and 50: Table 28: Differential Input Operat
Page 51 and 52: Figure 18: Definition of Differenti
Page 53 and 54: Figure 19: Nominal Slew Rate Defini
Page 55 and 56: ODT Characteristics Figure 21: ODT
Page 57 and 58: Table 33: R TT Effective Impedances
Page 59 and 60: Figure 23: t AON and t AOF Definiti
Page 61 and 62: Output Driver Impedance Figure 26:
Page 63 and 64: 34 Ohm Driver The 34� driver’s
Page 65 and 66: Alternative 40 Ohm Driver Table 45:
Page 67 and 68: Output Characteristics and Operatin
Page 69 and 70: Figure 28: Differential Output Sign
Page 71 and 72: Slew Rate Definitions for Different
Page 73 and 74: Table 53: DDR3-1333 Speed Bins DDR3
Page 75 and 76: Table 55: DDR3-1866 Speed Bins DDR3
Page 77 and 78: PDF: 09005aef826aaadc Micron Techno
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PDF: 09005aef826aaadc Micron Techno
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2Gb: x4, x8, x16 DDR3 SDRAM Electri
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2Gb: x4, x8, x16 DDR3 SDRAM Electri
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2Gb: x4, x8, x16 DDR3 SDRAM Command
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Table 62: Derating Values for t IS/
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Figure 32: Nominal Slew Rate and t
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Figure 34: Tangent Line for t IS (C
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Data Setup, Hold, and Derating 2Gb:
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Table 68: Derating Values for t DS/
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2Gb: x4, x8, x16 DDR3 SDRAM Data Se
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Figure 37: Nominal Slew Rate for t
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Figure 39: Tangent Line for t DH (D
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2Gb: x4, x8, x16 DDR3 SDRAM Command
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Commands DESELECT NO OPERATION ZQ C
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PRECHARGE REFRESH 2Gb: x4, x8, x16
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DLL Disable Mode • All other self
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Figure 42: DLL Disable Mode to DLL
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Input Clock Frequency Change 2Gb: x
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Write Leveling Figure 45: Write Lev
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Write Leveling Procedure 2Gb: x4, x
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Write Leveling Mode Exit Procedure
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Figure 48: Initialization Sequence
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Figure 50: MRS to nonMRS Command Ti
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Table 77: Burst Order Burst Length
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Mode Register 1 (MR1) Figure 53: Mo
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On-Die Termination (ODT) WRITE LEVE
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Mode Register 2 (MR2) Figure 55: Mo
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SRT versus ASR 2Gb: x4, x8, x16 DDR
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Figure 58: MPR Block Diagram Memory
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MPR Read Predefined Pattern The pre
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ACTIVATE Operation Before any READ
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READ Operation Figure 66: READ Late
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2Gb: x4, x8, x16 DDR3 SDRAM READ Op
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Figure 77: Data Strobe Timing - REA
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Figure 80: t RPST Timing CK CK# DQS
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Figure 81: t WPRE Timing Figure 82:
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Figure 90: WRITE (BL8) to PRECHARGE
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Figure 93: Data Input Timing DQS, D
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Figure 94: Self Refresh Entry/Exit
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Power-Down Mode Power-down is synch
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Figure 95: Active Power-Down Entry
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Figure 98: Power-Down Entry After R
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Figure 102: ACTIVATE to Power-Down
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RESET Operation 2Gb: x4, x8, x16 DD
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On-Die Termination (ODT) Figure 107
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Dynamic ODT Dynamic ODT Special Use
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Table 89: Mode Registers for R TT(W
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Synchronous ODT Mode ODT Latency an
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2Gb: x4, x8, x16 DDR3 SDRAM - Micron

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