2Gb: x4, x8, x16 DDR3 SDRAM - Micron

Table 33: R TT Effective Impedances (Continued)
MR1
[9, 6, 2] RTT Resistor VOUT Min Nom Max Unit
1, 0, 0 ��� RTT20(PD40) 0.2 × VDDQ 0.6 1.0 1.1 RZQ/6
0.5 × VDDQ 0.9 1.0 1.1 RZQ/6
0.8 × VDDQ 0.9 1.0 1.4 RZQ/6
RTT20(PU40) 0.2 × VDDQ 0.9 1.0 1.4 RZQ/6
0.5 × VDDQ 0.9 1.0 1.1 RZQ/6
0.8 × VDDQ 0.6 1.0 1.1 RZQ/6
��� VIL(AC) to VIH(AC) 0.9 1.0 1.6 RZQ/12
ODT Sensitivity
Table 34: ODT Sensitivity Definition
Note: 1. Values assume an RZQ of 240��������
If either the temperature or voltage changes after I/O calibration, then the tolerance
limits listed in Table 32 (page 55) and Table 33 can be expected to widen according to
Table 34 and Table 35 (page 57).
Symbol Min Max Unit
RTT 0.9 - dRTTdT × |DT| - dRTTdV × |DV| 1.6 + dRTTdT × |DT| + dRTTdV × |DV| RZQ/(2, 4, 6, 8, 12)
ODT Timing Definitions
Note: 1. �T = T - T(@ calibration), �V = V DDQ - V DDQ(@ calibration) and V DD = V DDQ.
Table 35: ODT Temperature and Voltage Sensitivity
2Gb: x4, x8, x16 DDR3 SDRAM
ODT Characteristics
Change Min Max Unit
dRTTdT 0 1.5 %/°C
dRTTdV 0 0.15 %/mV
Note: 1. �T = T - T(@ calibration), �V = V DDQ - V DDQ(@ calibration) and V DD = V DDQ.
ODT loading differs from that used in AC timing measurements. The reference load for
ODT timings is shown in Figure 22. Two parameters define when ODT turns on or off
synchronously, two define when ODT turns on or off asynchronously, and another defines
when ODT turns on or off dynamically. Table 36 outlines and provides definition
and measurement references settings for each parameter (see Table 37 (page 58)).
ODT turn-on time begins when the output leaves High-Z and ODT resistance begins to
turn on. ODT turn-off time begins when the output leaves Low-Z and ODT resistance
begins to turn off.
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