2Gb: x4, x8, x16 DDR3 SDRAM - Micron

Table 49: Differential Output Driver Characteristics
All voltages are referenced to VSS Parameter/Condition Symbol Min Max Unit Notes
Output leakage current: DQ are disabled;
0V � VOUT � VDDQ; ODT is disabled; ODT is HIGH
IOZ –5 5 μA 1
Output slew rate: Differential; For rising and falling
edges, measure between VOL,diff(AC) = –0.2 × VDDQ and
VOH,diff(AC) = +0.2 × VDDQ SRQdiff 5 12 V/ns 1
Output differential cross-point voltage VOX(AC) VREF - 150 VREF + 150 mV 1, 2, 3
Differential high-level output voltage VOH,diff(AC) +0.2 × VDDQ V 1, 4
Differential low-level output voltage VOL,diff(AC) –0.2 × VDDQ V 1, 4
Delta Ron between pull-up and pull-down for DQ/DQS MMPUPD –10 10 % 1, 5
Test load for AC timing and output slew rates Output to VTT (VDDQ/2) via 25� resistor 3
Figure 27: DQ Output Signal
2Gb: x4, x8, x16 DDR3 SDRAM
Output Characteristics and Operating Conditions
Notes: 1. RZQ of 240��±1% with RZQ/7 enabled (default 34� driver) and is applicable after proper
ZQ calibration has been performed at a stable temperature and voltage (V DDQ = V DD;
V SSQ = V SS).
2. V REF = V DDQ/2; slew rate @ 5 V/ns, interpolate for faster slew rate.
3. See Figure 29 (page 69) for the test load configuration.
4. See Table 51 (page 71) for the output slew rate.
5. See Table 38 (page 62) for additional information.
6. See Figure 28 (page 69) for an example of a differential output signal.
MAX output
V OH(AC)
V OL(AC)
MIN output
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2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 68 Micron Technology, Inc. reserves the right to change products or specifications without notice.
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