2Gb: x4, x8, x16 DDR3 SDRAM - Micron

More documents

Recommendations

Info

Table 4: 96-Ball FBGA – x16 Ball Descriptions Symbol Type Description A13, A12/BC#, A11, A10/AP, A[9:0] 2Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Input Address inputs: Provide the row address for ACTIVATE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 sampled during a PRECHARGE command determines whether the PRECHARGE applies to one bank (A10 LOW, bank selected by BA[2:0]) or all banks (A10 HIGH). The address inputs also provide the op-code during a LOAD MODE command. Address inputs are referenced to V REFCA. A12/BC#: When enabled in the mode register (MR), A12 is sampled during READ and WRITE commands to determine whether burst chop (on-the-fly) will be performed (HIGH = BL8 or no burst chop, LOW = BC4). See Table 71 (page 114). BA[2:0] Input Bank address inputs: BA[2:0] define the bank to which an ACTIVATE, READ, WRITE, or PRECHARGE command is being applied. BA[2:0] define which mode register (MR0, MR1, MR2, or MR3) is loaded during the LOAD MODE command. BA[2:0] are referenced to VREFCA. CK, CK# Input Clock: CK and CK# are differential clock inputs. All control and address input signals are sampled on the crossing of the positive edge of CK and the negative edge of CK#. Output data strobe (DQS, DQS#) is referenced to the crossings of CK and CK#. CKE Input Clock enable: CKE enables (registered HIGH) and disables (registered LOW) internal circuitry and clocks on the DRAM. The specific circuitry that is enabled/disabled is dependent upon the DDR3 SDRAM configuration and operating mode. Taking CKE LOW provides PRECHARGE POWER-DOWN and SELF REFRESH operations (all banks idle),or active power-down (row active in any bank). CKE is synchronous for power-down entry and exit and for self refresh entry. CKE is asynchronous for self refresh exit. Input buffers (excluding CK, CK#, CKE, RESET#, and ODT) are disabled during POWER-DOWN. Input buffers (excluding CKE and RESET#) are disabled during SELF RE- FRESH. CKE is referenced to VREFCA. CS# Input Chip select: CS# enables (registered LOW) and disables (registered HIGH) the command decoder. All commands are masked when CS# is registered HIGH. CS# provides for external rank selection on systems with multiple ranks. CS# is considered part of the command code. CS# is referenced to VREFCA. LDM Input Input data mask: LDM is a lower-byte, input mask signal for write data. Lower-byte input data is masked when LDM is sampled HIGH along with the input data during a write access. Although the LDM ball is input-only, the LDM loading is designed to match that of the DQ and DQS balls. LDM is referenced to VREFDQ. ODT Input On-die termination: ODT enables (registered HIGH) and disables (registered LOW) termination resistance internal to the DDR3 SDRAM. When enabled in normal operation, ODT is only applied to each of the following balls: DQ[15:0], LDQS, LDQS#, UDQS, UDQS#, LDM, and UDM. The ODT input is ignored if disabled via the LOAD MODE command. ODT is referenced to VREFCA. RAS#, CAS#, WE# Input Command inputs: RAS#, CAS#, and WE# (along with CS#) define the command being entered and are referenced to VREFCA. RESET# Input Reset: RESET# is an active LOW CMOS input referenced to VSS. The RESET# input receiver is a CMOS input defined as a rail-to-rail signal with DC HIGH � 0.8 × VDD and DC LOW � 0.2 × VDDQ. RESET# assertion and de-assertion are asynchronous. PDF: 09005aef826aaadc 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 20 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2006 Micron Technology, Inc. All rights reserved.
Table 4: 96-Ball FBGA – x16 Ball Descriptions (Continued) 2Gb: x4, x8, x16 DDR3 SDRAM Ball Assignments and Descriptions Symbol Type Description UDM Input Input data mask: UDM is an upper-byte, input mask signal for write data. Upper-byte input data is masked when UDM is sampled HIGH along with that input data during a WRITE access. Although the UDM ball is input-only, the UDM loading is designed to match that of the DQ and DQS balls. UDM is referenced to VREFDQ. DQ[7:0] I/O Data input/output: Lower byte of bidirectional data bus for the x16 configuration. DQ[7:0] are referenced to VREFDQ. DQ[15:8] I/O Data input/output: Upper byte of bidirectional data bus for the x16 configuration. DQ[15:8] are referenced to VREFDQ. LDQS, LDQS# I/O Lower byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned to write data. UDQS, UDQS# I/O Upper byte data strobe: Output with read data. Edge-aligned with read data. Input with write data. DQS is center-aligned to write data. VDD Supply Power supply: 1.5V ±0.075V. VDDQ Supply DQ power supply: 1.5V ±0.075V. Isolated on the device for improved noise immunity. VREFCA Supply Reference voltage for control, command, and address: VREFCA must be maintained at all times (including self refresh) for proper device operation. VREFDQ Supply Reference voltage for data: VREFDQ must be maintained at all times (excluding self refresh) for proper device operation. VSS Supply Ground. VSSQ Supply DQ ground: Isolated on the device for improved noise immunity. ZQ Reference External reference ball for output drive calibration: This ball is tied to external 240� resistor RZQ, which is tied to VSSQ. NC – No connect: These balls should be left unconnected (the ball has no connection to the DRAM or to other balls). PDF: 09005aef826aaadc 2Gb_DDR3_SDRAM.pdf – Rev. P 2/12 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2006 Micron Technology, Inc. All rights reserved.
Page 1 and 2: DDR3 SDRAM MT41J512M4 - 64 Meg x 4
Page 3 and 4: 2Gb: x4, x8, x16 DDR3 SDRAM Feature
Page 11 and 12: State Diagram Figure 2: Simplified
Page 13 and 14: 2Gb: x4, x8, x16 DDR3 SDRAM Functio
Page 15 and 16: Figure 4: 256 Meg x 8 Functional Bl
Page 17 and 18: Figure 7: 96-Ball FBGA - x16 (Top V
Page 19: Table 3: 78-Ball FBGA - x4, x8 Ball
Page 23 and 24: Figure 9: 78-Ball FBGA - x4, x8 (HX
Page 25 and 26: Figure 11: 96-Ball FBGA - x16 (JT)
Page 27 and 28: Input/Output Capacitance Table 6: D
Page 29 and 30: Figure 12: Thermal Measurement Poin
Page 31 and 32: Table 9: I DD0 Measurement Loop CK,
Page 33 and 34: 2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 35 and 36: Table 14: I DD4R Measurement Loop C
Page 37 and 38: Table 16: I DD5B Measurement Loop C
Page 39 and 40: Table 18: I DD7 Measurement Loop CK
Page 41 and 42: Electrical Characteristics - I DD S
Page 43 and 44: Table 21: I DD Maximum Limits - Die
Page 45 and 46: Electrical Specifications - DC and
Page 47 and 48: Figure 13: Input Signal 0.925V 0.85
Page 49 and 50: Table 28: Differential Input Operat
Page 51 and 52: Figure 18: Definition of Differenti
Page 53 and 54: Figure 19: Nominal Slew Rate Defini
Page 55 and 56: ODT Characteristics Figure 21: ODT
Page 57 and 58: Table 33: R TT Effective Impedances
Page 59 and 60: Figure 23: t AON and t AOF Definiti
Page 61 and 62: Output Driver Impedance Figure 26:
Page 63 and 64: 34 Ohm Driver The 34� driver’s
Page 65 and 66: Alternative 40 Ohm Driver Table 45:
Page 67 and 68: Output Characteristics and Operatin
Page 69 and 70: Figure 28: Differential Output Sign
Page 71 and 72:
Slew Rate Definitions for Different
Page 73 and 74:
Table 53: DDR3-1333 Speed Bins DDR3
Page 75 and 76:
Table 55: DDR3-1866 Speed Bins DDR3
Page 77 and 78:
PDF: 09005aef826aaadc Micron Techno
Page 79 and 80:
Page 81 and 82:
Page 83 and 84:
Page 85 and 86:
2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 87 and 88:
Page 89 and 90:
Page 91 and 92:
Page 93 and 94:
Page 95 and 96:
2Gb: x4, x8, x16 DDR3 SDRAM Electri
Page 97 and 98:
2Gb: x4, x8, x16 DDR3 SDRAM Command
Page 99 and 100:
Table 62: Derating Values for t IS/
Page 101 and 102:
Figure 32: Nominal Slew Rate and t
Page 103 and 104:
Figure 34: Tangent Line for t IS (C
Page 105 and 106:
Data Setup, Hold, and Derating 2Gb:
Page 107 and 108:
Table 68: Derating Values for t DS/
Page 109 and 110:
2Gb: x4, x8, x16 DDR3 SDRAM Data Se
Page 111 and 112:
Figure 37: Nominal Slew Rate for t
Page 113 and 114:
Figure 39: Tangent Line for t DH (D
Page 115 and 116:
2Gb: x4, x8, x16 DDR3 SDRAM Command
Page 117 and 118:
Commands DESELECT NO OPERATION ZQ C
Page 119 and 120:
PRECHARGE REFRESH 2Gb: x4, x8, x16
Page 121 and 122:
DLL Disable Mode • All other self
Page 123 and 124:
Figure 42: DLL Disable Mode to DLL
Page 125 and 126:
Input Clock Frequency Change 2Gb: x
Page 127 and 128:
Write Leveling Figure 45: Write Lev
Page 129 and 130:
Write Leveling Procedure 2Gb: x4, x
Page 131 and 132:
Write Leveling Mode Exit Procedure
Page 133 and 134:
Figure 48: Initialization Sequence
Page 135 and 136:
Figure 50: MRS to nonMRS Command Ti
Page 137 and 138:
Table 77: Burst Order Burst Length
Page 139 and 140:
Mode Register 1 (MR1) Figure 53: Mo
Page 141 and 142:
On-Die Termination (ODT) WRITE LEVE
Page 143 and 144:
Mode Register 2 (MR2) Figure 55: Mo
Page 145 and 146:
SRT versus ASR 2Gb: x4, x8, x16 DDR
Page 147 and 148:
Figure 58: MPR Block Diagram Memory
Page 149 and 150:
Page 151 and 152:
Page 153 and 154:
MPR Read Predefined Pattern The pre
Page 155 and 156:
ACTIVATE Operation Before any READ
Page 157 and 158:
READ Operation Figure 66: READ Late
Page 159 and 160:
Page 161 and 162:
Page 163 and 164:
2Gb: x4, x8, x16 DDR3 SDRAM READ Op
Page 165 and 166:
Figure 77: Data Strobe Timing - REA
Page 167 and 168:
Figure 80: t RPST Timing CK CK# DQS
Page 169 and 170:
Figure 81: t WPRE Timing Figure 82:
Page 171 and 172:
Page 173 and 174:
Page 175 and 176:
Figure 90: WRITE (BL8) to PRECHARGE
Page 177 and 178:
Figure 93: Data Input Timing DQS, D
Page 179 and 180:
Figure 94: Self Refresh Entry/Exit
Page 181 and 182:
Power-Down Mode Power-down is synch
Page 183 and 184:
Figure 95: Active Power-Down Entry
Page 185 and 186:
Figure 98: Power-Down Entry After R
Page 187 and 188:
Figure 102: ACTIVATE to Power-Down
Page 189 and 190:
RESET Operation 2Gb: x4, x8, x16 DD
Page 191 and 192:
On-Die Termination (ODT) Figure 107
Page 193 and 194:
Dynamic ODT Dynamic ODT Special Use
Page 195 and 196:
Table 89: Mode Registers for R TT(W
Page 197 and 198:
Page 199 and 200:
Synchronous ODT Mode ODT Latency an
Page 201 and 202:
Page 203 and 204:
Page 205 and 206:
Page 207 and 208:
Page 209 and 210:
Page 211 and 212:
show all

2Gb: x4, x8, x16 DDR3 SDRAM - Micron

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?