3D Time-of-flight distance measurement with custom - Universität ...
3D Time-of-flight distance measurement with custom - Universität ...
3D Time-of-flight distance measurement with custom - Universität ...
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SOLID-STATE IMAGE SENSING 83<br />
3.4 Discussion<br />
Both CCD and CMOS technologies are special MOS technologies. They differ in<br />
optimizations <strong>of</strong> process parameters <strong>with</strong> different emphases. In a CCD line the<br />
defect <strong>of</strong> a single CCD gate (oxide breakthrough) may make a complete column<br />
unusable, whereas for CMOS APS only a single pixel would be unusable for a<br />
comparable defect. CCDs therefore have thicker gate oxides and are characterized<br />
by a certain process s<strong>of</strong>tness. In addition to the possibility <strong>of</strong> realizing overlapping<br />
CCD gates for a barrier-free potential coupling in the semiconductor, today’s CCD<br />
processes <strong>of</strong>fer buried channel implants for enhanced CTE performance. Also the<br />
substrate doping concentrations are usually lower than for CMOS processes,<br />
leading to deeper depletion regions for the same gate voltages. Usually <strong>with</strong> CCD<br />
processes only one type <strong>of</strong> transistor (p- or n-type) can be realized. Therefore only<br />
limited electronics can be realized on-chip.<br />
CMOS processes are optimized for fast reliable transistors <strong>with</strong> both n and p<br />
channel. They are available in prototyping services - so called MPWs (Multi project<br />
wafer). This allows the relatively cheap and uncomplicated realization <strong>of</strong> test<br />
structures. Unfortunately such MPW services are not available for CCD processes.<br />
Concerning this work, we would like to benefit from both the functionality <strong>of</strong> the<br />
CCD principle (note: not necessarily CCD process) and the flexibility <strong>of</strong> CMOS<br />
processes. As we will see in Chapter 5, we do not need CCD structures <strong>with</strong> a very<br />
good CTE performance. This is because the demodulation principle only requires a<br />
few charge transfers. The advantage <strong>of</strong> the CCD principle (also if realized in<br />
CMOS) over CMOS circuitry is that it <strong>of</strong>fers noise-free signal addition and defined<br />
local and temporal charge separation, assuming proper CCD structures and timing.<br />
In this way first signal processing steps (temporal sampling or demodulation in our<br />
application) can already be realized in the pixel.