3D Time-of-flight distance measurement with custom - Universität ...

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SOLID-STATE IMAGE SENSING 75 (I) SCCD (II) BCCD Figure 3.18 Structure and potential distribution in SCCD (I) and BCCD (II) structures for empty (a and c) and filled (b and d) potential buckets. [TEU]. In order to avoid these transportation losses, low doped n-channels are implanted into the semiconductor between the oxide and the bulk (illustrated in Figure 3.18 II). These so-called buried channels (the corresponding CCD is called buried channel CCD: BCCD) are positively biased with a voltage high enough to completely deplete the n-implant (usually done over the reset diffusion). This leads to a vertical potential minimum near the pn-junction between buried implant and psubstrate rather than at the semiconductor surface. The charge transport mechanism remains the same. The absolute potential level of the buried potential minimum can be influenced by the gate voltages, again enabling a switchable horizontal potential gradient, the basis for the CCD charge transport. Since the charge is transported in the buried channel some 100 nanometers away from the oxide/semiconductor junction, charge trapping losses are avoided. Therefore, BCCDs reach CTE values between 10 to 100 times better than SCCDs. The total width of the depletion region for BCCDs can be estimated by adding the depth of the pn-junction to the extension of the space charge region into the lower doped
76 CHAPTER 3 substrate (Equation 3.1). The capture volume is comparable to that of SCCDs for similar voltages. Figure 3.19 shows another advantage of BCCD devices over SCCDs. The transport deeper in the semiconductor additionally profits from increased fringing fields. The further away from the surface, the more blurred is the potential influence from neighboring CCD gates. Near the oxide there are regions under the photogate without a potential gradient. In these regions charge transport can only take place by thermal diffusion and self-induced drift, slow transport processes compared to the drift in an electric field (compare Section 3.1.3). Figure 3.19 Horizontal potential distribution at different distances from the surface. [TEU]. To summarize, in BCCDs the depletion of the semiconductor is not achieved by the voltages on the CCD gates but by properly biasing the pn-junction between the lowdoped buried implant and the semiconductor substrate. The voltages on the CCD gates are only used to generate potential differences in the horizontal direction, which makes the charge transportation possible.
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3D Time-of-flight distance measurem
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To my parents
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Meinen Eltern
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II 4. Power budget and resolution l
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Abstract Since we are living in a t
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centimeter accuracy. With the singl
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X Eine elegantere Methode zur Entfe
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INTRODUCTION 1 1. Introduction One
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INTRODUCTION 3 light source observe
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INTRODUCTION 5 Propagation time, ho
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INTRODUCTION 7 Chapter 3 gives a sh
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OPTICAL TOF RANGE MEASUREMENT 9 2.
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OPTICAL TOF RANGE MEASUREMENT 11 2.
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OPTICAL TOF RANGE MEASUREMENT 13 pr
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OPTICAL TOF RANGE MEASUREMENT 15 hi
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OPTICAL TOF RANGE MEASUREMENT 17 Pu
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OPTICAL TOF RANGE MEASUREMENT 19 Ad
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OPTICAL TOF RANGE MEASUREMENT 21 pr
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OPTICAL TOF RANGE MEASUREMENT 23 wh
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Page 67 and 68: 50 CHAPTER 3 the smearing effect, r
Page 69 and 70: 52 CHAPTER 3 3.1 Silicon properties
Page 71 and 72: 54 CHAPTER 3 (a) Figure 3.3 Optical
Page 73 and 74: 56 CHAPTER 3 Quantum efficiency in
Page 75 and 76: 58 CHAPTER 3 The different operatio
Page 77 and 78: 60 CHAPTER 3 (a) (b) Depletion widt
Page 79 and 80: 62 CHAPTER 3 Very special processes
Page 81 and 82: 64 CHAPTER 3 1 kT Dn = ⋅ vth ⋅
Page 83 and 84: 66 CHAPTER 3 The proportionality fa
Page 85 and 86: 68 CHAPTER 3 difference of only 1 V
Page 87 and 88: 70 CHAPTER 3 Flicker noise is cause
Page 89 and 90: 72 CHAPTER 3 A s = sf ⋅ q C ⎡ V
Page 91: 74 CHAPTER 3 amount of the charge p
Page 95 and 96: 78 CHAPTER 3 charge carriers the CT
Page 97 and 98: 80 CHAPTER 3 without causing short
Page 99 and 100: 82 CHAPTER 3 Over an address decode
Page 101 and 102: 84 CHAPTER 3 Orbit’s 2.0µm CMOS/
Page 103 and 104: 86 CHAPTER 4 Figure 4.1 P lens Lamb
Page 105 and 106: 88 CHAPTER 4 Required optical power
Page 107 and 108: 90 CHAPTER 4 4.2 Noise limitation o
Page 109 and 110: 92 CHAPTER 4 number of pseudo-backg
Page 111 and 112: 94 CHAPTER 4 Cmod = 1 QE(λ) = 0.65
Page 113 and 114: 96 CHAPTER 4 Range accuracy (std) i
Page 116 and 117: DEMODULATION PIXELS IN CMOS/CCD 99
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DEMODULATION PIXELS IN CMOS/CCD 125
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IMAGING TOF RANGE CAMERAS 151 6. Im
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IMAGING TOF RANGE CAMERAS 153 contr
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IMAGING TOF RANGE CAMERAS 155 6.1.2
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IMAGING TOF RANGE CAMERAS 157 gate
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IMAGING TOF RANGE CAMERAS 159 6.2 2
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IMAGING TOF RANGE CAMERAS 161 n+ di
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IMAGING TOF RANGE CAMERAS 163 pixel
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IMAGING TOF RANGE CAMERAS 165 Power
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IMAGING TOF RANGE CAMERAS 167 Delay
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IMAGING TOF RANGE CAMERAS 169 6.3 3
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IMAGING TOF RANGE CAMERAS 171 Gate
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IMAGING TOF RANGE CAMERAS 173 Bound
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IMAGING TOF RANGE CAMERAS 175 Figur
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IMAGING TOF RANGE CAMERAS 177 Final
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IMAGING TOF RANGE CAMERAS 179 #5 #6
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SUMMARY AND PERSPECTIVE 181 7. Summ
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SUMMARY AND PERSPECTIVE 183 into th
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SUMMARY AND PERSPECTIVE 185 or phas
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188 CHAPTER 8 8.2 Typical parameter
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190 CHAPTER 8 Spectral luminous int
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192 CHAPTER 8 MCD03S: Conditions SC
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194 CHAPTER 8 MCD06S: Measurement c
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196 [BRK] Brockhaus, “Naturwissen
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198 [KAI] I. Kaisto, et al., “Opt
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200 [SP1] T. Spirig et al., “The
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ACKNOWLEDGMENTS 203 Acknowledgments
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206 Publication list 1. R. Lange, P
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