REFERENCES 197 [FUR] M. Furumiya et al., “A ½-inch 1.3N-Pixel Progressive Scan CCD Image Sensor Employing 0.25 mm Gap Single-Layer Poly-Si Electrodes", Proceedings <strong>of</strong> IEEE International Solid-State Circuits Conference, San Francisco, (1999). [HAM] Hamamatsu prospectus, “Image Intensifiers”, (1994). [HAU] F. Hauser, “Internship at CSEM Zurich”, CSEM-internal report, (2000). [HEC] E. Hecht, A.Zajac, “OPTICS”, Addison-Wesley, (1974). [HEK] P. Heck, “Operation and characterization <strong>of</strong> a surface channel CCD-line”, Diploma work (Travail pratique de Diplôme), EPFL Lausanne/ CSEM Zurich, (1999). [HOF] B. H<strong>of</strong>fmann, “Einsteins Ideen”, Spektrum Akademischer Verlag, 1997; Translation <strong>of</strong>: “Relativity and Its Roots“, Scientific American Books, New York, (1983). [HOP] C. R. Hoople et al., “Characteristics <strong>of</strong> Submicrometer Gaps in Buried- Channel CCD Structures”, IEEE Transactions on electron devices, Vol. 38, No. 5, (1991). [HOP] G. Hopkinson, et al. “Noise reduction techniques for CCD image sensors”, J. Phys. E : Sci. Instrum., Vol. 15, pp. 1214-1222, (1982). [HP1] Hewlett Packard (now Agilent), “Super Flux LEDs, Technical Data”, Data sheet <strong>of</strong> HP SunPower Series, including HPWT-DH00, (1998). [HP2] Hewlett Packard (now Agilent), “Super Flux LED, Categories and Labels”, Application Note 1149-7, (1998). [JE1] G. Jellison et al. “Optical functions <strong>of</strong> silicon at elevated temperatures”, Journal <strong>of</strong> Applied Physics, 76, (1994). [JE2] G. Jellison, “Optical functions <strong>of</strong> silicon determined by two-channel polarization modulation ellipsometry”, North-Holland Physics Publishing, Optical Materials 1, pp. 41-47, (1992). [KA2] H. A. Kappner, “Verfahren und Anordnung zur dreidimensionalen optischen Erfassung von Objekten”, European Patent No. 0 192 993 A1, (1986).
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