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3D Time-of-flight distance measurement with custom - Universität ...

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SOLID-STATE IMAGE SENSING 49<br />

3. Solid-state image sensing<br />

Solid-state imaging has experienced a rapid growth, especially in the last ten years.<br />

This development has benefited from the steady improvements and miniaturization<br />

in the semiconductor industry and is also part <strong>of</strong> today’s multimedia revolution. The<br />

first semiconductor solid-state imagers were photodiode arrays, where each diode<br />

was directly connected to the output by a metal wire. The large capacitance <strong>of</strong><br />

these metal wires, resulting in a relatively slow signal readout speed and poor noise<br />

performance was, however, the killing factor that prevented a wide propagation <strong>of</strong><br />

photodiode arrays, at least at that time.<br />

In 1970 Boyle introduced a new, amazingly simple device for semiconductor image<br />

sensing [BOY, AME], the so-called charge coupled device: CCD. These elements<br />

collect optically generated charge carriers under locally separated photogates.<br />

Bundled to charge packets in the single pixels, the optically generated charge<br />

carriers can then, after a certain integration time, be moved through the<br />

semiconductor into certain storage areas by making use <strong>of</strong> the charge-coupling<br />

principle. This method is explained in more detail below. From these storage areas<br />

they are then sequentially shifted to one output stage, where the charge is<br />

converted into a voltage (Figure 3.1 c.) The use <strong>of</strong> only one low-capacitance output<br />

stage is still one <strong>of</strong> the essential advantages <strong>of</strong> CCDs since it means both low noise<br />

and very high homogeneity between the single pixels. Additionally, <strong>with</strong> the chargecoupling<br />

principle, it is possible to perform certain sorts <strong>of</strong> signal processing [SP4].<br />

The essentially noise-free charge addition <strong>of</strong> single charge carriers is only one<br />

example <strong>of</strong> CCD’s amazing charge domain signal processing capabilities. However,<br />

to operate CCDs, voltages between 10 and 20V are necessary, very <strong>of</strong>ten requiring<br />

large currents <strong>of</strong> up to some amperes, since capacitances <strong>of</strong> some nan<strong>of</strong>arads<br />

have to be charged and discharged <strong>with</strong>in nanoseconds. This results in relatively<br />

large power dissipation, a major drawback <strong>of</strong> CCDs compared to some <strong>of</strong> today’s<br />

CMOS APS sensors. Other weak points <strong>of</strong> CCDs are the facts that (1) the complete<br />

sensor always has to be read out in order to reset the pixel values and to start a<br />

new image acquisition and (2) the image is after-exposed during readout, known as

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