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3D Time-of-flight distance measurement with custom - Universität ...

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SOLID-STATE IMAGE SENSING 81<br />

3.3 Active pixel sensors: CMOS APS<br />

A possible realization <strong>of</strong> a CMOS APS sensor is shown in Figure 3.23. It is based<br />

on a photodiode that is reversely biased by connecting it to a reset source over the<br />

active channel <strong>of</strong> an MOS switch, the reset transistor. After this reset operation, the<br />

reset switch is opened and the photodiode floats. Optically generated free charge<br />

carriers now lead to a decrease in diode potential. Since the diode is also<br />

connected to the gate <strong>of</strong> a source follower transistor, the change in the diode<br />

potential leads to a change in conductivity <strong>of</strong> this transistor.<br />

1 Pixel<br />

VSS<br />

p+<br />

RESET0<br />

RSEL0<br />

RG:<br />

column reset VRS<br />

n+ n+<br />

RESET1<br />

RSEL1<br />

RSEL<br />

p-substrate<br />

VDD<br />

RESET2<br />

RSEL2<br />

Figure 3.23 Concept <strong>of</strong> a CMOS APS imager.<br />

BIAS_C<br />

CSEL0<br />

BIAS_C<br />

CSEL1<br />

BIAS_C<br />

CSEL2<br />

BIAS_C<br />

BIAS_A<br />

CSEL<br />

VDD<br />

BIAS_A<br />

OUT<br />

OUT

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