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3D Time-of-flight distance measurement with custom - Universität ...

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SOLID-STATE IMAGE SENSING 77<br />

(a)<br />

(b)<br />

CTE<br />

CTE<br />

1.000<br />

0.995<br />

0.990<br />

0.985<br />

0.980<br />

0.975<br />

0.970<br />

0.965<br />

0.960<br />

1.0000<br />

0.9995<br />

0.9990<br />

0.9985<br />

0.9980<br />

0.9975<br />

0.9970<br />

0.9965<br />

10000 100000<br />

Size <strong>of</strong> charge packet in #electrons<br />

1000000<br />

0 5 10 15 20 25<br />

Clock frequency in MHz<br />

Figure 3.20 Charge transfer efficiency <strong>of</strong> a SCCD realized in Orbit 2.0µm<br />

CMOS/CCD technology. (a) CTE vs. number <strong>of</strong> transported electrons<br />

@ 20 MHz clock frequency. (b) CTE vs. clock frequency @<br />

1,000,000 electrons charge packet. Gate amplitude for both<br />

<strong>measurement</strong>s: 10 V. [BLU].<br />

The CTE decreases for high modulation frequencies and small charge packets, as<br />

the <strong>measurement</strong>s <strong>of</strong> a surface channel CCD line shows (Figure 3.20). We realized<br />

this CCD line to characterize the CCD performance <strong>of</strong> the ORBIT 2.0µm<br />

CMOS/CCD technology, the same technology that we used for the demodulation<br />

pixels. At high frequencies an increasing number <strong>of</strong> charge carriers does not have<br />

enough time for the transfer from one pixel to the next. For a small number <strong>of</strong>

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