3D Time-of-flight distance measurement with custom - Universität ...
3D Time-of-flight distance measurement with custom - Universität ...
3D Time-of-flight distance measurement with custom - Universität ...
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184 CHAPTER 7<br />
suggested, by using two optically identical photosites per pixel, both accessed from<br />
two highly symmetrical sides. The “optical identity” can be achieved by a microlens<br />
array that equally distributes and focuses the incoming optical power per pixel to<br />
both photosites. With such a structure it will be possible to integrate all four<br />
sampling points in parallel.<br />
In the near future it will be possible to fabricate CCD structures in sub-micron<br />
standard CMOS processes <strong>with</strong>out any special CCD process option. This is<br />
because, for smaller technologies, the minimum gap between two transistor gates<br />
becomes so small that the potential barrier between these gates can be removed<br />
<strong>with</strong> relatively low gate voltages <strong>of</strong> a few volts. The possibility to change from a<br />
modified (non-standard) 2.0µm CMOS/CCD process, as we used for the pixels<br />
presented here, to a standard CMOS process brings several advantages: (1) The<br />
devices will become cheaper, (2) it will be possible for the first time to realize the<br />
complete bandwidth <strong>of</strong> CCD signal processing combined <strong>with</strong> additional on-chip<br />
functionality in a single process, and (3), it will be possible to realize smaller<br />
structures. This is an enormous advantage, because the diffusion-limited transfer<br />
time <strong>of</strong> charge carriers from one CCD gate to another increases <strong>with</strong> the square <strong>of</strong><br />
the CCD gate’s length. With smaller technologies, shorter gates become possible,<br />
enabling a faster CCD transport. In particular, all <strong>of</strong> the pixels presented here will<br />
be realizable even <strong>with</strong> improved performance in such a technology. First results <strong>of</strong><br />
such inter-poly-gap CCDs are presented in [CAR, FUR, HOP, KRA]. An interesting<br />
but more demanding alternative to the 2D-demodulation device introduced here<br />
would be the use <strong>of</strong> a sensitivity-modulated array <strong>of</strong> avalanche photodiodes. Such a<br />
device is introduced in [BIB]; however, as long as the observed problems <strong>with</strong> too<br />
high dark current and much too large excess noise factor are not solved, this<br />
approach remains impractical.<br />
To summarize, we have shown that TOF is the range imaging technique <strong>of</strong> the<br />
future. We were able to demonstrate robust, compact range cameras (2D and <strong>3D</strong>)<br />
<strong>with</strong> excellent performance that is only limited in a very predictable manner by<br />
ubiquitous quantum noise <strong>of</strong> the employed light. The ongoing miniaturization in<br />
microelectronics will lead to faster demodulation devices so that we can expect<br />
devices for demodulation frequencies beyond 100 MHz in the future. Also, it will be<br />
possible to realize additional functionality such as on-chip A/D conversion, <strong>distance</strong>