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3D Time-of-flight distance measurement with custom - Universität ...

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188 CHAPTER 8<br />

8.2 Typical parameters <strong>of</strong> a 2 µm CMOS technology<br />

Layer Thickness<br />

/ depth<br />

Doping<br />

concentration<br />

Sheet<br />

resistance<br />

p substrate - 5⋅10 14 cm -3 3000 Ω/square<br />

APT implant (anti punch through) - 5⋅10 15 cm -3 -<br />

n+ 0.3 µm 10 20 cm -3 30 Ω/square<br />

p+ 0.3 µm 10 20 cm -3 70 Ω/square<br />

n-well 3.0 µm 1.5⋅10 16 cm -3 2500 Ω/sq.<br />

Metal1 0.6 µm - 0.06 Ω/sq.<br />

Metal2 1.2 µm - 0.03 Ω/sq.<br />

Poly1 0.5 µm - 20 Ω/square<br />

Poly2 0.5 µm - 25 Ω/square<br />

Interpoly oxide 0.08 µm - -<br />

Poly1 gate oxide 0.04 µm - -<br />

Poly2 gate oxide 0.045 µm - -<br />

Field oxide (poly to substrate) 0.6 µm - -<br />

Gate to oxide capacitances<br />

Poly1 80⋅10 -5 pF/µm 2<br />

Poly2 70⋅10 -5 pF/µm 2

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