3D Time-of-flight distance measurement with custom - Universität ...

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SOLID-STATE IMAGE SENSING 59 with the channel potential ΦS: ⎧ ⎛ ⎞⎫ ⎪ ⎜ 2 ⎛ Q ⎞ 2⋅ C ⋅ ⎟⎪ ⎪ ⎜ ⎜ − + n ox VG VFB ⎟ Q ε ⋅ ε ⋅ ⋅ ⎝ ⎠ ⎟⎪ Φ = − + n + 0 Si q NA Cox s V G VFB ⎨ ⋅⎜1 − 1+ 2 ⎟⎬ Cox ⎪ C ⎜ ε0 ⋅ εSi ⋅ q⋅ N ox A ⎟⎪ ⎪ ⎜ ⎟⎪ ⎩ ⎝ ⎠⎭ Equation 3.4 In this equation Qn is the charge of integrated electrons per unit area. (This charge is of negative polarity, because electrons are collected. q, the elementary charge, is of positive polarity � Qn = -ne·q). VG is the gate voltage, VFB is the flatband voltage and (VG - VFB) is the effective gate voltage. (See [TEU] for more details). The oxide capacitance per unit area Cox is given by: ε0 ⋅ ε C ox ox = t Equation 3.5 ox In Figure 3.8 the depletion width is shown as a function of typical doping concentrations and gate voltages. The higher the gate voltage and the lower the substrate doping, the deeper the depletion region is. For CCD applications the depletion region should usually be as deep as possible in order to directly capture as many optically generated charge carriers as possible.
60 CHAPTER 3 (a) (b) Depletion width (um) Depletion width (um) 12.00 10.00 8.00 6.00 4.00 2.00 0.00 12.00 10.00 8.00 6.00 4.00 2.00 0.00 2E14/cm^3 1E14/cm^3 4E14/cm^3 1E15/cm^3 1E16/cm^3 1E17/cm^3 0 2 4 6 8 10 Effective gate voltage (V) 2V 4V 6V 8V 10V 1.00E+14 1.00E+15 1.00E+16 1.00E+17 Substrate doping in 1/cm^3 Figure 3.8 MOS photogate: (a) Depletion width versus gate voltage for fixed substrate doping. (b) Depletion width versus substrate doping for fixed effective gate voltage (VG-VFB). (Qn=0). The decrease in depletion depth as a function of optically generated electrons is illustrated in Figure 3.9 for typical CCD dimensions.
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3D Time-of-flight distance measurem
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To my parents
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Meinen Eltern
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II 4. Power budget and resolution l
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Abstract Since we are living in a t
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centimeter accuracy. With the singl
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X Eine elegantere Methode zur Entfe
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INTRODUCTION 1 1. Introduction One
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INTRODUCTION 3 light source observe
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INTRODUCTION 5 Propagation time, ho
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INTRODUCTION 7 Chapter 3 gives a sh
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Page 67 and 68: 50 CHAPTER 3 the smearing effect, r
Page 69 and 70: 52 CHAPTER 3 3.1 Silicon properties
Page 71 and 72: 54 CHAPTER 3 (a) Figure 3.3 Optical
Page 73 and 74: 56 CHAPTER 3 Quantum efficiency in
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Page 79 and 80: 62 CHAPTER 3 Very special processes
Page 81 and 82: 64 CHAPTER 3 1 kT Dn = ⋅ vth ⋅
Page 83 and 84: 66 CHAPTER 3 The proportionality fa
Page 85 and 86: 68 CHAPTER 3 difference of only 1 V
Page 87 and 88: 70 CHAPTER 3 Flicker noise is cause
Page 89 and 90: 72 CHAPTER 3 A s = sf ⋅ q C ⎡ V
Page 91 and 92: 74 CHAPTER 3 amount of the charge p
Page 93 and 94: 76 CHAPTER 3 substrate (Equation 3.
Page 95 and 96: 78 CHAPTER 3 charge carriers the CT
Page 97 and 98: 80 CHAPTER 3 without causing short
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Page 101 and 102: 84 CHAPTER 3 Orbit’s 2.0µm CMOS/
Page 103 and 104: 86 CHAPTER 4 Figure 4.1 P lens Lamb
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Page 111 and 112: 94 CHAPTER 4 Cmod = 1 QE(λ) = 0.65
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DEMODULATION PIXELS IN CMOS/CCD 109
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IMAGING TOF RANGE CAMERAS 151 6. Im
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IMAGING TOF RANGE CAMERAS 153 contr
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IMAGING TOF RANGE CAMERAS 155 6.1.2
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IMAGING TOF RANGE CAMERAS 157 gate
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IMAGING TOF RANGE CAMERAS 159 6.2 2
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IMAGING TOF RANGE CAMERAS 161 n+ di
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IMAGING TOF RANGE CAMERAS 163 pixel
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IMAGING TOF RANGE CAMERAS 165 Power
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IMAGING TOF RANGE CAMERAS 167 Delay
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IMAGING TOF RANGE CAMERAS 169 6.3 3
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IMAGING TOF RANGE CAMERAS 171 Gate
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IMAGING TOF RANGE CAMERAS 173 Bound
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IMAGING TOF RANGE CAMERAS 175 Figur
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IMAGING TOF RANGE CAMERAS 177 Final
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IMAGING TOF RANGE CAMERAS 179 #5 #6
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SUMMARY AND PERSPECTIVE 181 7. Summ
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SUMMARY AND PERSPECTIVE 183 into th
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SUMMARY AND PERSPECTIVE 185 or phas
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188 CHAPTER 8 8.2 Typical parameter
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190 CHAPTER 8 Spectral luminous int
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192 CHAPTER 8 MCD03S: Conditions SC
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194 CHAPTER 8 MCD06S: Measurement c
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196 [BRK] Brockhaus, “Naturwissen
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198 [KAI] I. Kaisto, et al., “Opt
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200 [SP1] T. Spirig et al., “The
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ACKNOWLEDGMENTS 203 Acknowledgments
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206 Publication list 1. R. Lange, P
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