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3D Time-of-flight distance measurement with custom - Universität ...

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54 CHAPTER 3<br />

(a)<br />

Figure 3.3 Optical absorption. (a) Semiconductor under illumination.<br />

(b) Exponential decay <strong>of</strong> photon flux. [Sze].<br />

The absorption coefficient and hence the penetration depth depends on the light’s<br />

wavelength. The longer the wavelength the deeper in the semiconductor<br />

photoconversion takes place. This behavior is shown in Figure 3.4.<br />

penetration depth (um)<br />

20.0<br />

17.5<br />

15.0<br />

12.5<br />

10.0<br />

7.5<br />

5.0<br />

2.5<br />

Jellison empirical model<br />

0.0<br />

300 400 500 600 700 800 900<br />

wavelength (nm)<br />

Figure 3.4 Optical penetration depth <strong>of</strong> light into silicon. Theory and practical<br />

<strong>measurement</strong>s differ for long wavelengths. The available models<br />

predict a deeper penetration depth than can be observed by<br />

<strong>measurement</strong>s. (Dashed: theoretical model, solid: measured data.)<br />

[JE1], [JE2].<br />

(b)

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