3D Time-of-flight distance measurement with custom - Universität ...

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SOLID-STATE IMAGE SENSING 77 (a) (b) CTE CTE 1.000 0.995 0.990 0.985 0.980 0.975 0.970 0.965 0.960 1.0000 0.9995 0.9990 0.9985 0.9980 0.9975 0.9970 0.9965 10000 100000 Size of charge packet in #electrons 1000000 0 5 10 15 20 25 Clock frequency in MHz Figure 3.20 Charge transfer efficiency of a SCCD realized in Orbit 2.0µm CMOS/CCD technology. (a) CTE vs. number of transported electrons @ 20 MHz clock frequency. (b) CTE vs. clock frequency @ 1,000,000 electrons charge packet. Gate amplitude for both measurements: 10 V. [BLU]. The CTE decreases for high modulation frequencies and small charge packets, as the measurements of a surface channel CCD line shows (Figure 3.20). We realized this CCD line to characterize the CCD performance of the ORBIT 2.0µm CMOS/CCD technology, the same technology that we used for the demodulation pixels. At high frequencies an increasing number of charge carriers does not have enough time for the transfer from one pixel to the next. For a small number of
78 CHAPTER 3 charge carriers the CTE decreases due to the missing or at least reduced contribution of self-induced drift on the charge transport; also trapping is a more serious problem for a small number of electrons to transport. [CAR] gives a very detailed description of how different parameters influence the CTE of a CCD. Today’s CCDs are realized with two or three different polysilicon layers. With these layers it is possible to overlap the single CCD gates in a small area. This leads to very thin gaps between the single gates, small enough that no potential barriers arise between the gates, which would possibly prohibit a complete charge transfer. (a) gate-poly metal diffusion substrate field oxide (thick) 2nd-poly gate oxide (thin) poly-poly capacitor in CMOS potential 5V (c) CCD in CMOS with overlapping poly layers Figure 3.21 SCCD realization with a 2 poly MOS process: SCCD with overlapping poly layers (poly: polysilicon). Many available CMOS processes offer two polysilicon layers. However the design rules prohibit the realization of transistor gates with the second poly layer. This 10V (b)
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3D Time-of-flight distance measurem
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To my parents
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Meinen Eltern
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II 4. Power budget and resolution l
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Abstract Since we are living in a t
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centimeter accuracy. With the singl
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X Eine elegantere Methode zur Entfe
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INTRODUCTION 1 1. Introduction One
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INTRODUCTION 3 light source observe
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INTRODUCTION 5 Propagation time, ho
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INTRODUCTION 7 Chapter 3 gives a sh
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OPTICAL TOF RANGE MEASUREMENT 9 2.
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OPTICAL TOF RANGE MEASUREMENT 11 2.
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OPTICAL TOF RANGE MEASUREMENT 13 pr
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OPTICAL TOF RANGE MEASUREMENT 15 hi
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OPTICAL TOF RANGE MEASUREMENT 17 Pu
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OPTICAL TOF RANGE MEASUREMENT 19 Ad
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OPTICAL TOF RANGE MEASUREMENT 21 pr
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OPTICAL TOF RANGE MEASUREMENT 23 wh
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OPTICAL TOF RANGE MEASUREMENT 25 δ
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Page 67 and 68: 50 CHAPTER 3 the smearing effect, r
Page 69 and 70: 52 CHAPTER 3 3.1 Silicon properties
Page 71 and 72: 54 CHAPTER 3 (a) Figure 3.3 Optical
Page 73 and 74: 56 CHAPTER 3 Quantum efficiency in
Page 75 and 76: 58 CHAPTER 3 The different operatio
Page 77 and 78: 60 CHAPTER 3 (a) (b) Depletion widt
Page 79 and 80: 62 CHAPTER 3 Very special processes
Page 81 and 82: 64 CHAPTER 3 1 kT Dn = ⋅ vth ⋅
Page 83 and 84: 66 CHAPTER 3 The proportionality fa
Page 85 and 86: 68 CHAPTER 3 difference of only 1 V
Page 87 and 88: 70 CHAPTER 3 Flicker noise is cause
Page 89 and 90: 72 CHAPTER 3 A s = sf ⋅ q C ⎡ V
Page 91 and 92: 74 CHAPTER 3 amount of the charge p
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Page 97 and 98: 80 CHAPTER 3 without causing short
Page 99 and 100: 82 CHAPTER 3 Over an address decode
Page 101 and 102: 84 CHAPTER 3 Orbit’s 2.0µm CMOS/
Page 103 and 104: 86 CHAPTER 4 Figure 4.1 P lens Lamb
Page 105 and 106: 88 CHAPTER 4 Required optical power
Page 107 and 108: 90 CHAPTER 4 4.2 Noise limitation o
Page 109 and 110: 92 CHAPTER 4 number of pseudo-backg
Page 111 and 112: 94 CHAPTER 4 Cmod = 1 QE(λ) = 0.65
Page 113 and 114: 96 CHAPTER 4 Range accuracy (std) i
Page 116 and 117: DEMODULATION PIXELS IN CMOS/CCD 99
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DEMODULATION PIXELS IN CMOS/CCD 127
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IMAGING TOF RANGE CAMERAS 151 6. Im
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IMAGING TOF RANGE CAMERAS 153 contr
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IMAGING TOF RANGE CAMERAS 155 6.1.2
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IMAGING TOF RANGE CAMERAS 157 gate
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IMAGING TOF RANGE CAMERAS 159 6.2 2
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IMAGING TOF RANGE CAMERAS 161 n+ di
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IMAGING TOF RANGE CAMERAS 163 pixel
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IMAGING TOF RANGE CAMERAS 165 Power
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IMAGING TOF RANGE CAMERAS 167 Delay
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IMAGING TOF RANGE CAMERAS 169 6.3 3
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IMAGING TOF RANGE CAMERAS 171 Gate
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IMAGING TOF RANGE CAMERAS 173 Bound
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IMAGING TOF RANGE CAMERAS 175 Figur
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IMAGING TOF RANGE CAMERAS 177 Final
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IMAGING TOF RANGE CAMERAS 179 #5 #6
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SUMMARY AND PERSPECTIVE 181 7. Summ
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SUMMARY AND PERSPECTIVE 183 into th
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SUMMARY AND PERSPECTIVE 185 or phas
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188 CHAPTER 8 8.2 Typical parameter
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190 CHAPTER 8 Spectral luminous int
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192 CHAPTER 8 MCD03S: Conditions SC
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194 CHAPTER 8 MCD06S: Measurement c
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196 [BRK] Brockhaus, “Naturwissen
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198 [KAI] I. Kaisto, et al., “Opt
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200 [SP1] T. Spirig et al., “The
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ACKNOWLEDGMENTS 203 Acknowledgments
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206 Publication list 1. R. Lange, P
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