3D Time-of-flight distance measurement with custom - Universität ...
3D Time-of-flight distance measurement with custom - Universität ...
3D Time-of-flight distance measurement with custom - Universität ...
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136 CHAPTER 5<br />
This is only possible, since the CCD-performance <strong>of</strong> adding and storing signals in<br />
the charge domain is nearly noise-free. Normally, one would expect a lower optical<br />
power to lead to a worse demodulation contrast, since we know, from CTE<br />
<strong>measurement</strong>s <strong>of</strong> CCDs that are realized in the same technology, that the CTE is<br />
better, the more charge is to be transported (c.f. Figure 3.20). This is because all<br />
three transport mechanisms (self-induced drift, diffusion and fringing fields)<br />
contribute to the charge transport. Self-induced drift strongly depends on the<br />
number <strong>of</strong> integrated electrons, because a smaller number <strong>of</strong> electrons leads to a<br />
reduced influence <strong>of</strong> self-induced drift on the overall charge transfer.<br />
For 20 MHz modulation, the short-time integration lasts only 25 ns (50 ns<br />
modulation period). In this period, only few electrons are generated and transported<br />
to the integration gate. In fact, as one can see from MCD05, for 175,000<br />
femtowatts, the highest optical power used, only 18 electrons are generated <strong>with</strong>in<br />
50ns, statistically speaking, i.e. only 9 electrons <strong>with</strong>in the active sampling time. For<br />
the lowest optical power used the conditions are much worse: one electron is<br />
generated, statistically speaking, only every 300 th modulation period. From these<br />
numbers, we understand that, under the above conditions, self-induced drift can<br />
have no influence at all on the charge transfer. We really move single electrons.<br />
Demodulation only works here <strong>with</strong> the help <strong>of</strong> statistics. This enormous<br />
performance is a big welcome surprise.<br />
In addition to the total optical power on one photogate, the average resulting output<br />
voltage swing is also listed in MCD05. This can be calculated <strong>with</strong> known quantum<br />
efficiency, wavelength, integration time, conversion capacitance and amplification<br />
<strong>of</strong> the output stage. Also the total number <strong>of</strong> electrons generated during the<br />
integration time is listed, as well as the number <strong>of</strong> electrons statistically generated<br />
during only one modulation period. Since these values are smaller than one, it is<br />
more meaningful to list the inverse value, which is the number <strong>of</strong> modulation cycles<br />
that have to pass until one electron is optically generated by the modulated light<br />
source, statistically speaking.