3D Time-of-flight distance measurement with custom - Universität ...
3D Time-of-flight distance measurement with custom - Universität ...
3D Time-of-flight distance measurement with custom - Universität ...
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DEMODULATION PIXELS IN CMOS/CCD 115<br />
Thermal diffusion drift E-field drift (1 V)<br />
Transport <strong>distance</strong> Transport time Transport <strong>distance</strong> Transport time<br />
30 µm 270 ns 30 µm (1 V) 7 ns<br />
15 µµµµm 68 ns 15 µm (1 V) 1.8 ns<br />
10 µm 30 ns 10 µm (1 V) 0.8 ns<br />
5 µm 7.5 ns 5 µm (1 V) 0.2 ns<br />
3⋅10 µm 90 ns 3⋅10 µm (1 V=3·0.33 V) 7 ns<br />
3⋅⋅⋅⋅5 µµµµm 23 ns 3⋅⋅⋅⋅5 µµµµm (1 V=3·0.33 V) 1.8 ns<br />
Table 5.2 Transfer time estimation <strong>with</strong> pure diffusion and pure E-field model.<br />
(p-substrate, NA=4⋅10 14 cm -3 , µn=1300 cm 2 /Vs, Dn=33.6 cm 2 /s).<br />
The 1-tap structure benefits from stronger fringing fields, since the pixel architecture<br />
allows the realization <strong>of</strong> shorter CCD gates. Also the transfer does not necessarily<br />
require high charge transfer efficiency, as in the multitap approach. According to<br />
Table 5.2 we can expect transfer times between 2 and 10 ns (depending on the<br />
actual fringing field influence) corresponding to demodulation frequencies up to<br />
100 MHz or even 500 MHz. The subdivision <strong>of</strong> the photogate into three separate<br />
gates results in a speed improvement <strong>of</strong> at least a factor <strong>of</strong> three (considering only<br />
diffusion), more probably a factor <strong>of</strong> 10 to 20, since <strong>with</strong> (1) smaller gate lengths<br />
and (2) more gate junctions (three instead <strong>of</strong> one) the fringing field influence<br />
increases. We demonstrate the 1-tap pixel <strong>with</strong> demodulation frequencies up to<br />
20 MHz (actual operation frequency <strong>of</strong> the <strong>3D</strong> cameras introduced in Chapter 6).<br />
For higher frequencies it would be even more difficult to realize the highly accurate<br />
control and driving electronics. But another fact also reduces the demodulation<br />
performance at high modulation frequencies, the penetration depth <strong>of</strong> the<br />
modulated light. So far we have only considered the transfer times <strong>of</strong> electrons that<br />
are already captured by the electric field <strong>of</strong> the CCD gates. Generally, however,<br />
depending on the wavelength (c.f. Figure 3.4), the electron hole pairs are<br />
generated (far) away from the semiconductor surface. They will first have to diffuse<br />
to the top, before being captured by the CCD-field. This random diffusion process<br />
takes time and additionally limits the pixel-bandwidth, especially for modulation light<br />
<strong>of</strong> long wavelength.