3D Time-of-flight distance measurement with custom - Universität ...

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SOLID-STATE IMAGE SENSING 83 3.4 Discussion Both CCD and CMOS technologies are special MOS technologies. They differ in optimizations of process parameters with different emphases. In a CCD line the defect of a single CCD gate (oxide breakthrough) may make a complete column unusable, whereas for CMOS APS only a single pixel would be unusable for a comparable defect. CCDs therefore have thicker gate oxides and are characterized by a certain process softness. In addition to the possibility of realizing overlapping CCD gates for a barrier-free potential coupling in the semiconductor, today’s CCD processes offer buried channel implants for enhanced CTE performance. Also the substrate doping concentrations are usually lower than for CMOS processes, leading to deeper depletion regions for the same gate voltages. Usually with CCD processes only one type of transistor (p- or n-type) can be realized. Therefore only limited electronics can be realized on-chip. CMOS processes are optimized for fast reliable transistors with both n and p channel. They are available in prototyping services - so called MPWs (Multi project wafer). This allows the relatively cheap and uncomplicated realization of test structures. Unfortunately such MPW services are not available for CCD processes. Concerning this work, we would like to benefit from both the functionality of the CCD principle (note: not necessarily CCD process) and the flexibility of CMOS processes. As we will see in Chapter 5, we do not need CCD structures with a very good CTE performance. This is because the demodulation principle only requires a few charge transfers. The advantage of the CCD principle (also if realized in CMOS) over CMOS circuitry is that it offers noise-free signal addition and defined local and temporal charge separation, assuming proper CCD structures and timing. In this way first signal processing steps (temporal sampling or demodulation in our application) can already be realized in the pixel.
84 CHAPTER 3 Orbit’s 2.0µm CMOS/CCD process offers this possibility to realize both CCD and CMOS structures. For our application it is not important to have the best CCD performance as with pure CCD processes. A 2.0µm process is, however, coarse compared to today’s CMOS processes (0.18µm), a clear indication that such a process will probably not be supported for much longer. With future sub-micron CMOS processes it will be possible to realize 1-poly surface channel CCDs with sufficient transfer efficiency. This will open the door to the realization of further signal processing tasks already in the pixel, using both the CCD principle and CMOS circuitry, while maintaining reasonable fill factors.
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3D Time-of-flight distance measurem
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To my parents
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Meinen Eltern
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II 4. Power budget and resolution l
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Abstract Since we are living in a t
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centimeter accuracy. With the singl
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X Eine elegantere Methode zur Entfe
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INTRODUCTION 1 1. Introduction One
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INTRODUCTION 3 light source observe
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INTRODUCTION 5 Propagation time, ho
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INTRODUCTION 7 Chapter 3 gives a sh
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OPTICAL TOF RANGE MEASUREMENT 9 2.
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OPTICAL TOF RANGE MEASUREMENT 11 2.
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OPTICAL TOF RANGE MEASUREMENT 13 pr
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OPTICAL TOF RANGE MEASUREMENT 15 hi
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OPTICAL TOF RANGE MEASUREMENT 17 Pu
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OPTICAL TOF RANGE MEASUREMENT 19 Ad
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OPTICAL TOF RANGE MEASUREMENT 21 pr
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OPTICAL TOF RANGE MEASUREMENT 23 wh
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OPTICAL TOF RANGE MEASUREMENT 25 δ
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OPTICAL TOF RANGE MEASUREMENT 27 c(
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OPTICAL TOF RANGE MEASUREMENT 29 A
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OPTICAL TOF RANGE MEASUREMENT 31 ph
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Page 69 and 70: 52 CHAPTER 3 3.1 Silicon properties
Page 71 and 72: 54 CHAPTER 3 (a) Figure 3.3 Optical
Page 73 and 74: 56 CHAPTER 3 Quantum efficiency in
Page 75 and 76: 58 CHAPTER 3 The different operatio
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Page 79 and 80: 62 CHAPTER 3 Very special processes
Page 81 and 82: 64 CHAPTER 3 1 kT Dn = ⋅ vth ⋅
Page 83 and 84: 66 CHAPTER 3 The proportionality fa
Page 85 and 86: 68 CHAPTER 3 difference of only 1 V
Page 87 and 88: 70 CHAPTER 3 Flicker noise is cause
Page 89 and 90: 72 CHAPTER 3 A s = sf ⋅ q C ⎡ V
Page 91 and 92: 74 CHAPTER 3 amount of the charge p
Page 93 and 94: 76 CHAPTER 3 substrate (Equation 3.
Page 95 and 96: 78 CHAPTER 3 charge carriers the CT
Page 97 and 98: 80 CHAPTER 3 without causing short
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Page 111 and 112: 94 CHAPTER 4 Cmod = 1 QE(λ) = 0.65
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DEMODULATION PIXELS IN CMOS/CCD 133
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IMAGING TOF RANGE CAMERAS 151 6. Im
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IMAGING TOF RANGE CAMERAS 153 contr
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IMAGING TOF RANGE CAMERAS 155 6.1.2
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IMAGING TOF RANGE CAMERAS 157 gate
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IMAGING TOF RANGE CAMERAS 159 6.2 2
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IMAGING TOF RANGE CAMERAS 161 n+ di
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IMAGING TOF RANGE CAMERAS 163 pixel
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IMAGING TOF RANGE CAMERAS 165 Power
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IMAGING TOF RANGE CAMERAS 167 Delay
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IMAGING TOF RANGE CAMERAS 169 6.3 3
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IMAGING TOF RANGE CAMERAS 171 Gate
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IMAGING TOF RANGE CAMERAS 173 Bound
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IMAGING TOF RANGE CAMERAS 175 Figur
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IMAGING TOF RANGE CAMERAS 177 Final
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IMAGING TOF RANGE CAMERAS 179 #5 #6
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SUMMARY AND PERSPECTIVE 181 7. Summ
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SUMMARY AND PERSPECTIVE 183 into th
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SUMMARY AND PERSPECTIVE 185 or phas
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188 CHAPTER 8 8.2 Typical parameter
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190 CHAPTER 8 Spectral luminous int
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192 CHAPTER 8 MCD03S: Conditions SC
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194 CHAPTER 8 MCD06S: Measurement c
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196 [BRK] Brockhaus, “Naturwissen
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198 [KAI] I. Kaisto, et al., “Opt
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200 [SP1] T. Spirig et al., “The
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ACKNOWLEDGMENTS 203 Acknowledgments
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206 Publication list 1. R. Lange, P
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