TMPM330 - Keil

17. Flash Memory Operation
Under development
This section describes the hardware configuration and operation of the flash memory.
17.1 Flash Memory
17.1.1 Features
TMPM330 (rev 0.4)17-1
TMPM330
1) Memory capacity
The TMPM330FDFG device contains 4M bits (512 kB) of flash memory capacity. The
memory area consists of 6 independent memory blocks (128 kB × 3, 64kB × 1 and 32kB × 2)
to enable independent write access to each block. When the CPU is to access the internal
flash memory, 32-bit data bus width is used.
2) Write/erase time
Write time: 1.28 sec/Chip (Typ) 0.32 sec/128Kbyte (Typ.)
Erase: 0.6 sec/Chip (Typ) 0.1msec/block (Typ.)
(Note) The above values are theoretical values not including data transfer time.
The write time per chip depends on the write method to be used by the user.
3) Programming method
The onboard programming mode is available for the user to program (rewrite) the device
while it is mounted on the user's board.
・The onboard programming mode
3-1) User boot mode
The user's original rewriting method can be supported.
3-2) Single boot mode
The rewriting method to use serial data transfer (Toshiba's unique method) can
be supported.
Rewriting method
The flash memory included in this device is generally compliant with the applicable JEDEC
standards except for some specific functions. Therefore, if the user is currently using an external
flash memory device, it is easy to implement the functions into this device. Furthermore, the
user is not required to build his/her own programs to realize complicated write and erase
functions because such functions are automatically performed using the circuits already built-in
the flash memory chip.
This device is also implemented with a read-protect function to inhibit reading flash memory
data from any external writer device. On the other hand, rewrite protection is available only
through command-based software programming; any hardware setting method to apply
+12VDC is not supported. See chapter 22 for details of ROM protection and security function.
Flash Memory Operation