Bulletin 2011/35 - European Patent Office
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(H01L) I.1(2)<br />

H01L 27/146 → (51) G03F 7/00<br />

H01L 27/148 → (51) G02B 7/34<br />

(51) H01L 27/15 (11) 2 362 419 A2<br />

H01L 33/00<br />

(25) En (26) En<br />

(21) 11154424.3 (22) 14.02.<strong>2011</strong><br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 18.02.2010 KR 20100014438<br />

(54) • Leuchtdiode, Gehäuse für Leuchtdiode,<br />

Herstellungsverfahren für Leuchtdiode und<br />

Beleuchtungssystem<br />

• Light emitting diode, light emitting diode<br />

package, method of manufacturing light<br />

emitting diode and lighting system<br />

• Diode électroluminescente, boîtier de diode<br />

électroluminescente, procédé de fabrication<br />

de diode électroluminescente et système<br />

d'éclairage<br />

(71) LG Innotek Co., Ltd., Seoul Square 541,<br />

Namdaemunno 5-ga Jung-gu, Seoul 100-<br />

714, KR<br />

(72) Jeong, Hwan Hee, 100-714, Seoul, KR<br />

Lee, Sang Youl, 100-714, Seoul, KR<br />

Song, June O, 100-714, Seoul, KR<br />

Choi, Kwang Ki, 100-714, Seoul, KR<br />

(74) Cabinet Plasseraud, 52, rue de la Victoire,<br />

75440 Paris Cedex 09, FR<br />

(51) H01L 27/15 (11) 2 362 420 A1<br />

H01L 33/62 H01L 33/30<br />

(25) En (26) En<br />

(21) 11156194.0 (22) 28.02.<strong>2011</strong><br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 27.02.2010 KR 20100018277<br />

(54) • Lichtemittierende Halbleitervorrichtung mit<br />

Mehrzellenanordnung, lichtemittierendes<br />

Modul und Beleuchtungsvorrichtung<br />

• Semiconductor Light Emitting Device Having<br />

Multi-Cell Array, Light Emitting Module,<br />

and Illumination Apparatus<br />

• Dispositif électroluminescent semiconducteur<br />

doté d'un réseau à cellules<br />

multiples, module électroluminescent et<br />

appareil d'éclairage<br />

(71) Samsung LED Co., Ltd., 314 Maetan 3-dong<br />

Yeongtong-gu Suwon, Gyunggi-do, KR<br />

(72) Lee, Su Yeol, Seongnam Gyunggi-do, KR<br />

Kim, Yong Tae, Suwon Gyunggi-do, KR<br />

Lee, Jin Bock, Gyunggi-do, KR<br />

Kim, Gi Bum, Gyunggi-do, KR<br />

(74) Grünecker, Kinkeldey, Stockmair & Schwanhäusser<br />

Anwaltssozietät, Leopoldstrasse 4,<br />

80802 München, DE<br />

(51) H01L 27/28 (11) 2 362 421 A1<br />

H01L 27/30<br />

(25) En (26) En<br />

(21) 11155661.9 (22) 23.02.<strong>2011</strong><br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 26.02.2010 IT VA20100018<br />

(54) • Anpassbares flexibles Blatt einer monolithisch<br />

hergestellten Anordnung aus trennbaren<br />

Zellen, die jeweils eine vollständig<br />

organische integrierte Schaltung enthalten,<br />

die zur Durchführung einer bestimmten<br />

Funktion angepasst wurde<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

• Tailorable flexible sheet of monolithically<br />

fabricated array of separable cells each<br />

comprising a wholly organic, integrated<br />

circuit adapted to perform a specific<br />

function<br />

• Feuille souple personnalisable d'un réseau<br />

monolithique de cellules séparables, chacune<br />

comprenant un circuit intégré entièrement<br />

organique adapté pour réaliser une<br />

fonction particulière<br />

(71) STMicroelectronics S.r.l., Via Olivetti, 2,<br />

20041 Agrate Brianza (MI), IT<br />

(72) La Rosa, Manuela, 95014, Giarre, IT<br />

(74) Barbaro, Gaetano, Società Italiana Brevetti S.<br />

p.A. Via Carducci, 8, 20123 Milano, IT<br />

H01L 27/30 → (51) H01L 27/28<br />

H01L 29/08 → (51) H01L 29/78<br />

H01L 29/10 → (51) H01L 29/78<br />

H01L 29/16 → (51) H01L 51/00<br />

H01L 29/36 → (51) H01L 29/78<br />

H01L 29/40 → (51) H01L 29/78<br />

(51) H01L 29/78 (11) 2 362 422 A2<br />

H01L 29/10 H01L 29/08<br />

H01L 29/36 H01L 21/336<br />

(25) En (26) En<br />

(21) 11166099.9 (22) 05.04.2002<br />

(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />

LU MC NL PT SE TR<br />

(30) 11.04.2001 US 833132<br />

19.10.2001 US 8171<br />

(54) • Vertikale Leistungshalbleiteranordnung und<br />

Verfahren zu deren Herstellung<br />

• Vertical power semiconductor device and<br />

method of making the same<br />

• Dispositif semi-conducteur vertical de<br />

puissance et sa méthode de fabrication<br />

(71) Silicon Semiconductor Corporation, 633<br />

Davis Drive Suite 500, Durham, NC 27713,<br />

US<br />

(72) Baliga, Bantval Jayant, Raleigh, NC 27613,<br />

US<br />

(74) Benson, Christopher, Harrison Goddard<br />

Foote Fountain Precinct Balm Green, Sheffield<br />

S1 2JA, GB<br />

(62) 02762151.5 / 1 396 030<br />

(51) H01L 29/78 (11) 2 362 423 A2<br />

H01L 29/08 H01L 29/36<br />

H01L 29/40 H01L 21/336<br />

H01L 29/10<br />

(25) En (26) En<br />

(21) 11166103.9 (22) 05.04.2002<br />

(84) AT BE CH CY DE DK ES FI FR GB GR IE IT LI<br />

LU MC NL PT SE TR<br />

(30) 11.04.2001 US 833132<br />

19.10.2001 US 8171<br />

(54) • Vertikale Leistungshalbleiteranordnung und<br />

Verfahren zu deren Herstellung<br />

• Vertical power semiconductor device and<br />

method of making the same<br />

• Dispositif semi-conducteur vertical de<br />

puissance et sa méthode de fabrication<br />

(71) Silicon Semiconductor Corporation, 633<br />

Davis Drive Suite 500, Durham, NC 27713,<br />

US<br />

(72) Baliga, Bantval Jayant, Raleigh, NC 27613,<br />

US<br />

(74) Benson, Christopher, et al, Harrison Goddard<br />

Foote Fountain Precinct Balm Green, Sheffield<br />

S1 2JA, GB<br />

(62) 02762151.5 / 1 396 030<br />

192<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>35</strong>/<strong>2011</strong>) 31.08.<strong>2011</strong><br />

H01L 29/78 → (51) H01L 21/336<br />

(51) H01L 29/786 (11) 2 362 424 A1<br />

(25) En (26) En<br />

(21) 11166765.5 (22) 29.01.2008<br />

(84) DE FR GB<br />

(30) 17.05.2007 KR 20070048310<br />

(54) • Dünnschichttransistor auf ZnO-Basis und<br />

Herstellungsverfahren dafür<br />

• ZnO-based thin film transistor and method<br />

of manufacturing the same<br />

• Transistor à couche mince à base de ZnO<br />

et son procédé de fabrication<br />

(71) Samsung Electronics Co., Ltd., 416 Maetandong,<br />

Yeongtong-gu Suwon-si, Gyeonggi-do<br />

442-742, KR<br />

(72) Ryu, Myung-kwan, Gyeonggi-do 449-712,<br />

KR<br />

Kim, Jun-seong, Gyeonggi-do 449-712, KR<br />

Lee, Sang-yoon, Gyeonggi-do 449-712, KR<br />

Hwang, Euk-che, Gyeonggi-do 449-712, KR<br />

Kim, Tae-sang, Gyeonggi-do 449-712, KR<br />

Kwon, Jang-yeon, Gyeonggi-do 449-712, KR<br />

Park, Kyung-bae, Gyeonggi-do 449-712, KR<br />

Son, Kyung-seok, Gyeonggi-do 449-712, KR<br />

Jung, Ji-sim, Gyeonggi-do 449-712, KR<br />

(74) Greene, Simon Kenneth, Elkington and Fife<br />

LLP Prospect House 8 Pembroke Road,<br />

Sevenoaks Kent TN13 1XR, GB<br />

(62) 08150763.4 / 1 993 141<br />

H01L 29/786 → (51) C07D 495/14<br />

H01L 29/786 → (51) H01L 51/00<br />

(51) H01L 31/0224 (11) 2 362 425 A1<br />

H01L 31/18<br />

(25) En (26) En<br />

(21) 10290100.6 (22) 26.02.2010<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

AL BA RS<br />

(54) • Verfahren zur Bildung eines selektiven<br />

Kontakts<br />

• A method for forming a selective contact<br />

• Procédé de formation d'un contact sélectif<br />

(71) Excico Group NV, Kempische Steenweg 305-<br />

2, <strong>35</strong>00 Hasselt, BE<br />

(72) Emeraud, Thierry, <strong>35</strong>00 Hasselt, BE<br />

(74) Moens, Marnix Karel Christiane, BiiP cvba<br />

Culliganlaan 1B, 1831 Diegem (Brussels), BE<br />

(51) H01L 31/0224 (11) 2 362 426 A2<br />

H01L 31/18<br />

(25) En (26) En<br />

(21) 11155255.0 (22) 21.02.<strong>2011</strong><br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 19.02.2010 KR 20100015150<br />

(54) • Photovoltaisches Zellsubstrat und photovoltaische<br />

Zelle damit<br />

• Photovoltaic cell substrate and photovoltaic<br />

cell including the same<br />

• Substrat de cellule photovoltaïque et cellule<br />

photovoltaïque l'incluant<br />

(71) Samsung Corning Precision Materials Co.,<br />

Ltd., 644 JinPyeong-dong, Gumi-si,<br />

Gyeongsangbuk-do 730-7<strong>35</strong>, KR<br />

(72) Kim, Jin-Seok, 336-841, Asan-si, KR<br />

Yoo, Young Zo, 336-841, Asan-si, KR<br />

Kim, Seo Hyun, 336-841, Asan-si, KR<br />

(74) Gulde Hengelhaupt Ziebig & Schneider,<br />

<strong>Patent</strong>anwälte - Rechtsanwälte Wallstraße<br />

58/59, 10179 Berlin, DE

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