24/06/2005 - Controller General of Patents, Designs, and Trade Marks

(12) PATENT APPLICATION PUBLICATION
(19) INDIA (21)
(22) Date of filing of
Application:
(54) Title of the invention:
02/05/200
5
EARLY PUBLICATION
Application No: 535/MUM/2005 A
(43)
(51) International
Classification:
C01G 41/00, C30B 28/00 (71)
(31) Priority Document No.: NIL
(32) Priority Date:
Publication Date: 24/06/2005
A PROCESS FOR THE SYNTHESIS OF TYPE-II TEXTURED
TUNGSTEN DISULFIDE THIN FILMS WITH Bi2S3 INTERLAYER
AS TEXTURE PROMOTOR
NIL
(33) Name of priority country: NIL
(86)
International Application No. & Filing Date:
NIL
NIL
(87) International Publication No.: NIL
(61)
(62)
Patent of addition to Application No.: NIL
Filed on: N.A.
Divisional to
Application No.: NIL
Filed on: N.A.
(72)
Name of the Applicant:
1. Dr. PATIL PRAMOD
SHANKARARAO
2. Mr. SADALE SHIVAJI BABASO
Address of the Applicant:
THIN FILM MATERIALS
LABORATORY, DEPARTMENT OF
PHYSICS, SHIVAJI UNIVERSITY,
KOLHAPUR- 416 004,
MAHARASHTRA, INDIA
Name of the Inventors:
1. Dr. PATIL PRAMOD
SHANKARARAO
2. Mr. SADALE SHIVAJI BABASO
Filed U/S 5(2) before the
Patents (Amendment)
Ordinance, 2004: NO
(57) Abstract : A process for the synthesis of highly textured WS2 thin films on to a quartz substrate that
comprises three steps;
i) deposition of bismuth layer of 50nm thickness onto ultrasonically cleaned quartz substrate by thermal
evaporation of bismuth powder,
ii) the said bismuth layer is coated with tungsten oxide in nitrogen ambient using an intermittent spray
pyrolysis apparatus (ISPA) by pyrolytic decomposition of ammonium tungstate solution to form a
bilayer precursor film (BPF),
iii) sulfurization of the said BPF in an evacuated quartz ampoule by accurately managing the thermal
treatment wherein the said layers are treated at 850˚C for 8 hours and further at 950˚C for 18 hours, prior
heat treatment forms an interlayer of Bi2S3m which melts during latter stage of thermal treatment,
allowing self assembled growth of highly textured WS2, cooling the said ampoule at the rate 50˚C/hr. to
room temperature completes the process.
(FIG. ) : NIL
Total pages : 22
The Patent Office Journal 24.06.2005 17731