24/06/2005 - Controller General of Patents, Designs, and Trade Marks

(21) Application No. 722/DEL/2000 A (22) Date of filing of Application: 09/08/2000
(54) Title of the invention: “A METHOD FOR FORMING A DIFFUSION REGION IN A SILICON
SUBSTRATE.”
(51) International Classification 7 : H 01L 21/20
(30) Priority Data :
(31) Document No.: 09/400,676
(32) Date : 21/09/1999
(33) Name of convention country :
U.S.A.
(66) Filed U/s 5(2) : NIL
(61) Patent of addition to application No. : NA
(62) Filed on : NA
(63) Divisional to Application No. :NIL
(64) Filed on : NA
Total No. of Pages: 19
(57) Abstract:
(71) Name of the applicant:
INTERNATIONAL BUSINESS
MACHINE CORPORATION.
Address of the Applicant:
Armonk, New York 10504, U.S.A.
(72) Name of the Inventor:
COOLBAUGH DOUGLAS D.
HARAME DAVID L.
A method of forming a diffusion region in a silicon substrate having low-resistance, acceptable defect
density, reliability and process control comprising the steps of: (a) subjecting a silicon substrate to a
first ion implantation step, said first ion implantation step being conducted under conditions such that a
region of amorphized Si is formed in said silicon substrate; (b) subjecting said silicon substrate
containing said region of amorphized Si to a second ion implantation step, said second ion implantation
step being carried out by implanting a dopant ion into said silicon substrate under conditions such that
the peak of implant of said dopant ion is within the region of amorphized Si; and (c) annealing said
silicon substrate under conditions such that said region of amorphized Si is re-crystallized thereby
forming a diffusion region in said silicon substrate is provided.
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