24/06/2005 - Controller General of Patents, Designs, and Trade Marks

(12) PATENT APPLICATION PUBLICATION
(19) INDIA (21)
(22) Date of filing of Application: 04/05/2005 (43)
(54) Title of the invention:
(51) International
Classification:
C101G 41/00, C01B 33/035 (71)
(31) Priority Document No.: NIL
(32) Priority Date:
EARLY PUBLICATION
Application No: 548/MUM/2005 A
Publication Date:
24/06/2005
RHEOTAXIAL PROCESS FOR THE PREPARATION OF TYPE-II
TEXTURED WS2 THIN FILMS HAVING POLYTYPE 3R
STACKING OF RHOMBOHEDRAL CRYSTALLITES USING PBS
INTERLAYER
NIL
(33) Name of priority country: NIL
(86)
International Application No. & Filing Date:
NIL
NIL
(87) International Publication No.: NIL
(61)
(62)
Patent of addition to Application No.: NIL
Filed on: N.A.
Divisional to
Application No.: NIL
Filed on: N.A.
(72)
Name of the Applicant:
1. Dr. PATIL PRAMOD
SHANKARARAO
2. Mr. SADALE SHIVAJI BABASO
Address of the Applicant:
THIN FILM MATERIALS
LABORATORY, DEPARTMENT OF
PHYSICS, SHIVAJI UNIVERSITY,
KOLHAPUR- 416 004,
MAHARASHTRA, INDIA
Name of the Inventors:
1. Dr. PATIL PRAMOD
SHANKARARAO
2. Mr. SADALE SHIVAJI BABASO
Filed U/S 5(2) before the
Patents (Amendment)
Ordinance, 2004: NO
(57) Abstract : A process for the synthesis of highly textured WS2 thin films onto a quartz substrate that
comprises three steps;
i) deposition of lead layer of 50 nm thickness onto ultrasonically cleaned quartz substrate by thermal
evaporation of lead powder,
ii) the said lead layer s coated with tungsten oxide in presence of nitrogen ambient using an intermittent
spray pyrolysis apparatus (ISPA) from pyrolytic decomposition of ammonium tungstate solution to form
a bilayer precursor film (BPF).
iii) Sulfurization of BPF in an evacuated quartz ampoule by accurately managing the thermal treatment
wherein the said layers are treated at 900˚C for 8 hours and at 1150˚C. for 20 hours. Prior heat treatment
form a pbS interlayer, which melts during latter stage of thermal treatment, allowing self assembled
growth of highly textured WS2, cooling the said ampoule at the rate of 50˚C/hr. to room temperature
completes the process.
(FIG. ) : NIL
Total pages : 20
The Patent Office Journal 24.06.2005 17733