24/06/2005 - Controller General of Patents, Designs, and Trade Marks

(12) PATENT APPLICATION PUBLICATION
(19) INDIA (21)
(22) Date of filing of
Application:
(54) Title of the invention:
04/05/200
5
EARLY PUBLICATION
Application No: 547/MUM/2005 A
(43)
(51) International
Classification:
C101G 41/00, C01B 33/035 (71)
(31) Priority Document No.: NIL
(32) Priority Date:
Publication Date: 24/06/2005
A PROCESS FOR THE SYNTHESIS OF EXCLUSIVELY TYPE-II
TEXTURED TUNGSTEN DISULFIDE THIN FILMS COMPRISING
HEXAGONAL CRYSTALLITES (2H) USING NICKEL SULFIDE
(Ni3S2) INTERLAYER AS A TEXTURE PROMOTER
NIL
(33) Name of priority country: NIL
(86)
International Application No. & Filing Date:
NIL
NIL
(87) International Publication No.: NIL
(61)
(62)
Patent of addition to Application No.: NIL
Filed on: N.A.
Divisional to
Application No.: NIL
Filed on: N.A.
(72)
Name of the Applicant:
1. Dr. PATIL PRAMOD
SHANKARARAO
2. Mr. SADALE SHIVAJI BABASO
Address of the Applicant:
THIN FILM MATERIALS
LABORATORY, DEPARTMENT OF
PHYSICS, SHIVAJI UNIVERSITY,
KOLHAPUR- 416 004,
MAHARASHTRA, INDIA
Name of the Inventors:
1. Dr. PATIL PRAMOD
SHANKARARAO
2. Mr. SADALE SHIVAJI BABASO
Filed U/S 5(2) before the
Patents (Amendment)
Ordinance, 2004: NO
(57) Abstract : A process for the synthesis of highly textured WS2 thin films onto a quartz substrate that
comprises three steps;
I. deposition of bismuth layer of 50nm thickness onto ultrasonically cleaned quartz substrate by thermal
evaporation of nickel powder,
II. the said nickel layer is coated with tungsten oxide in presence of nitrogen ambient using an intermittent
spray pyrolysis apparatus (ISPA) by pyrolytic decomposition of ammonium tungstate solution to form a
bilayer precursor film (BPF) at 250˚C
III. sulfurization of the said BPF in an evacuated quartz ampoule by accurately managing the thermal
treatment wherein the said layers are treated at 800˚C for 8 hours and at 950˚C for 24 hours, prior heat
treatment forms an interlayer of Ni3S2, with melt during latter state of thermal treatment, allowing self
assembled growth of highly textured WS2, cooling the said ampoule at the rate of 50˚C/hr. to room
temperature complete the process.
(FIG. ) : NIL
Total pages : 21
The Patent Office Journal 24.06.2005 17732