24/06/2005 - Controller General of Patents, Designs, and Trade Marks

(21) Application No. 319/DEL/2001 A (22) Date of filing of Application: 21/03/2001
(54) Title of the invention: “Stacked Poly–Poly And Mos Capacitor”
(51) International Classification 7 :
H01L 21/8249, H01L 21/20
(30) Priority Data :
(31) Document No.:09/551,168
(32) Date : 17/04/2000
(33) Name of convention country :U.S.A.
(66) Filed U/s 5(2) : NIL
(61) Patent of addition to application No. :
NA
(62) Filed on : NA
(63) Divisional to Application No. :NIL
(64) Filed on : NA
Total No of Pages: 29
(57) Abstract:
(71) Name of the applicant:
International Business Machines Corporation,
Address of the Applicant:
Armonk, New York, 10504, U.S.A.
(72) Name of the Inventor:
COOLBAUGH Douglas D;
DUNN James Stuart;
ST. ONGE Stephen Arthur;
A stacked poly–poly / MOS capacitor useful as a component in a BiCMOS device
comprising a semiconductor substrate having a region of a first conductivity–type formed in a
surface thereof; a gate oxide formed on said semiconductor substrate overlaying said region of first
conductivity–type; a first polysilicon layer formed on at least said gate oxide layer, said first
polysilicon layer being doped with an N or P–type dopant; a dielectric layer formed on said first
polysilicon layer; and a second polysilicon layer formed on said dielactric layer, said second
polysilicon layer being doped with the same or different dopant as the first polysilicon layer.
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