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Embedded Software for SoC - Grupo de Mecatrônica EESC/USP

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SDRAM-Energy-Aware Memory Allocation 321<br />

where:<br />

time, in CS/STBY/PWDNmo<strong>de</strong><br />

power in CS/STBY/PWDNmo<strong>de</strong><br />

energy of a preacharge/activation<br />

energy of a read/write<br />

number of precharge and activations in Bank i<br />

number of reads and writes in Bank i<br />

The static energy consumption <strong>de</strong>pends on which energy states are used<br />

during execution. An energy state manager [8] controls when the banks should<br />

transition to another energy state. As soon as the bank idles <strong>for</strong> more than<br />

one cycle, the manager switches the bank to the CS-mo<strong>de</strong>. When the bank is<br />

nee<strong>de</strong>d again it is switched back to STDBY-mo<strong>de</strong> within a cycle. Finally, we<br />

switch off the bank as soon as it remains idle <strong>for</strong> longer than a million cycles. 1<br />

The dynamic energy consumption <strong>de</strong>pends on which operations are nee<strong>de</strong>d<br />

to fetch/store the data from/into the memory. The energy parameters are<br />

presented in Table 24-1. The remaining parameters are obtained by simulation<br />

(see Section 6).<br />

Table 24-1. Energy consumption parameters.<br />

with self refresh<br />

14 nJ/miss<br />

2 nJ/access<br />

50 mw<br />

10.8 mW<br />

0 mW<br />

3. MOTIVATION AND PROBLEM FORMULATION<br />

According to our experiments on a multi-processor architecture, the dynamic<br />

energy contributes up to 68% of the energy of an SDRAM. Compared to a<br />

single-processor architectures, the SDRAM banks are more frequently used,<br />

and thus less static energy is burned waiting between consecutive accesses.<br />

Moreover, even though in future technology leakage energy is likely to<br />

increase, many techniques are un<strong>de</strong>r <strong>de</strong>velopment by DRAM manufactures<br />

to reduce the leakage energy during inactive mo<strong>de</strong>s [5]. There<strong>for</strong>e, in this<br />

paper we focus on data assignment techniques to reduce the dynamic energy.<br />

At the same time, our techniques reduce the time of the SDRAM banks spent<br />

in the active state, thereby thus reducing the leakage loss in that state which

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