Energy and Human Ambitions on a Finite Planet, 2021a
Energy and Human Ambitions on a Finite Planet, 2021a
Energy and Human Ambitions on a Finite Planet, 2021a
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13 Solar <str<strong>on</strong>g>Energy</str<strong>on</strong>g> 202<br />
physics is outside the scope of this course, but it is worth painting a<br />
general picture—enough to appreciate how much we can expect to get<br />
out of a PV panel.<br />
current (e – flow)<br />
e -<br />
external<br />
circuit<br />
e -<br />
+ + + + + + + +<br />
e -<br />
+ + +<br />
– – – – – – – – – – –<br />
e -<br />
e -<br />
light rays from the sun (phot<strong>on</strong>s)<br />
top grid c<strong>on</strong>tacts<br />
n-doped silic<strong>on</strong> (phosphorous)<br />
p-n juncti<strong>on</strong><br />
p-doped silic<strong>on</strong> (bor<strong>on</strong>)<br />
bottom c<strong>on</strong>tact<br />
Figure 13.4: PV cell structure <str<strong>on</strong>g>and</str<strong>on</strong>g> functi<strong>on</strong>.<br />
A juncti<strong>on</strong> between n–doped <str<strong>on</strong>g>and</str<strong>on</strong>g> p–doped<br />
semic<strong>on</strong>ductors sets up an electric field<br />
across the juncti<strong>on</strong>. If an electr<strong>on</strong> promoted<br />
to the c<strong>on</strong>ducti<strong>on</strong> b<str<strong>on</strong>g>and</str<strong>on</strong>g> by an incoming phot<strong>on</strong><br />
w<str<strong>on</strong>g>and</str<strong>on</strong>g>ers into the juncti<strong>on</strong>, it is swept<br />
across (red arrow) <str<strong>on</strong>g>and</str<strong>on</strong>g> successfully c<strong>on</strong>tributes<br />
to current. Electr<strong>on</strong>s do not c<strong>on</strong>tribute<br />
if created above the juncti<strong>on</strong>—as is<br />
more probable for blue phot<strong>on</strong>s that are not<br />
likely to penetrate as far. Electr<strong>on</strong>s do not<br />
c<strong>on</strong>tribute to the external (useful) current if<br />
they recombine (fill a hole) before finding<br />
the juncti<strong>on</strong> (red “poof”).<br />
Figure 13.4 illustrates the basic scheme. The underlying idea is that<br />
adjoining two slabs of silic<strong>on</strong> into which small amounts of two kinds<br />
of impurities have been deliberately introduced 17 that either c<strong>on</strong>tribute<br />
extra electr<strong>on</strong>s (n-type, for negative charge d<strong>on</strong>ors) or create vacancies<br />
for electr<strong>on</strong>s (p-type, for effective positive charge d<strong>on</strong>ors). Putting p-<br />
doped <str<strong>on</strong>g>and</str<strong>on</strong>g> n-doped materials together creates a juncti<strong>on</strong> 18 exhibiting<br />
a c<strong>on</strong>tact potential. The result is that “d<strong>on</strong>ated” electr<strong>on</strong>s right at the<br />
juncti<strong>on</strong> in the n-doped material decide to relocate across the juncti<strong>on</strong> to<br />
vacancies in the p-doped material, creating a wall of negative charge <strong>on</strong><br />
the p-side of the juncti<strong>on</strong> <str<strong>on</strong>g>and</str<strong>on</strong>g> leaving behind “holes” (missing electr<strong>on</strong>s)<br />
effectively creating positive charges 19 <strong>on</strong> the n-side of the juncti<strong>on</strong>. In the<br />
regi<strong>on</strong> right around the juncti<strong>on</strong> 20 an electric field is set up between the<br />
separated charges. Any electr<strong>on</strong> w<str<strong>on</strong>g>and</str<strong>on</strong>g>ering into this depleti<strong>on</strong> regi<strong>on</strong> will be<br />
swept across the juncti<strong>on</strong>, across the c<strong>on</strong>tact potential, <str<strong>on</strong>g>and</str<strong>on</strong>g> will c<strong>on</strong>tribute<br />
to a current that is then driven around the external circuit to return to<br />
its p-side home. 21 Figure 13.4 shows additi<strong>on</strong>al salient features that will<br />
be pointed out as the story develops below.<br />
17: . . . either during or after the semic<strong>on</strong>ductor<br />
crystal growth; a process called “doping”<br />
18: So-called p–n juncti<strong>on</strong>s form the basis<br />
of diodes <str<strong>on</strong>g>and</str<strong>on</strong>g> transistors.<br />
19: When a (negatively-charged) electr<strong>on</strong><br />
leaves an otherwise neutral medium, the<br />
medium becomes more positively charged.<br />
20: . . . called the “depleti<strong>on</strong> regi<strong>on</strong>,” as electr<strong>on</strong>s<br />
have been depleted from the porti<strong>on</strong><br />
of the n-side adjacent to the juncti<strong>on</strong><br />
21: Once it is “home,” the electr<strong>on</strong> will fill a<br />
vacancy created by a sun-liberated electr<strong>on</strong><br />
to end the journey.<br />
13.3.1 Theoretical Efficiency of Photovoltaics<br />
We will now follow the fate of <strong>on</strong>e phot<strong>on</strong> as it encounters the photovoltaic<br />
material. Doing so will expose the physical process of photovoltaics<br />
<str<strong>on</strong>g>and</str<strong>on</strong>g> simultaneously track losses to elucidate efficiency expectati<strong>on</strong>s.<br />
The basic scheme is that a phot<strong>on</strong> knocks an electr<strong>on</strong> away from an atom<br />
in the PV cell, <str<strong>on</strong>g>and</str<strong>on</strong>g> this electr<strong>on</strong> has some chance of being swept across<br />
the juncti<strong>on</strong> up<strong>on</strong> which it c<strong>on</strong>tributes to a useful current. 22 The goal<br />
is to get an electr<strong>on</strong> across the line. It is not unlike some sports where<br />
crossing a line is the goal, but many factors are lined up defending<br />
against successful attainment of this goal. Efficiency is related to the<br />
chance that a phot<strong>on</strong> will produce a “win.”<br />
22: Current is just flow of charge, <str<strong>on</strong>g>and</str<strong>on</strong>g> in this<br />
case is just movement of electr<strong>on</strong>s through<br />
the external circuit.<br />
© 2021 T. W. Murphy, Jr.; Creative Comm<strong>on</strong>s Attributi<strong>on</strong>-N<strong>on</strong>Commercial 4.0 Internati<strong>on</strong>al Lic.;<br />
Freely available at: https://escholarship.org/uc/energy_ambiti<strong>on</strong>s.