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Etude de capacités en couches minces à base d'oxydes métalliques ...

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tel-00141132, version 1 - 11 Apr 2007<br />

Chapitre 3 : <strong>Etu<strong>de</strong></strong> <strong>de</strong> <strong>capacités</strong> MIM <strong>à</strong> <strong>base</strong> <strong>de</strong> STO et BTO<br />

Bibliographie<br />

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nucléaires. Théorie, Techniques <strong>de</strong> l’Ingénieur, P2560.<br />

[3] P.M. Marcus, B<strong>en</strong>ding of a film-substrate system by epitaxy, Physical review B, 1996,<br />

vol53, n°11, p7460-7465.<br />

[4] P.C. Van Buskirk, R. Gardiner, P.S. Kirlin, S. Krupanidhi, Plasma-<strong>en</strong>hanced<br />

metalorganic chemical vapor <strong>de</strong>position of BaTiO3 films, Journal of Vacuum Sci<strong>en</strong>ce<br />

Technology A, 1992, vol 10, n°4, p1578-1583.<br />

[5] Q.X. Jia, Z.Q. Shi, W.A. An<strong>de</strong>rson, BaTiO3 thin film capacitors <strong>de</strong>posited by rf<br />

magnetron sputtering, Thin Solid Films, 1992, vol209, p230-239.<br />

[6] C.J. P<strong>en</strong>g, H. Hu, S.B. Krupanidhi, Low-<strong>en</strong>ergy oxyg<strong>en</strong> ion bombardm<strong>en</strong>t effect on<br />

BaTiO3 thin films grown by multi-ion-beam reactive sputtering technique, Applied Physics<br />

Letters, 1993, vol 63, n°6, p734-736.<br />

[7] P. Li, T.M. Lu, Reactive partially ionized beam <strong>de</strong>position of BaTiO3 thin films, Applied<br />

Physics Letters, 1990, vol 57, n°22, p2336-2338.<br />

[8] J.M.E. Harper, J.J Cuomo, R.J. Gambino, H.R. Kaufman, Ion bombardm<strong>en</strong>t of surfaces,<br />

1984, O. Auciello and R. Kelly Eds., chapitre 4.<br />

[9] B. André, E. Defaÿ, B. Hyot, G. Tartavel, L. Ulmer, Elaboration <strong>de</strong> con<strong>de</strong>nsateurs MIM<br />

<strong>en</strong> couche mince pour applications Above IC <strong>à</strong> <strong>base</strong> d’oxy<strong>de</strong>s <strong>métalliques</strong> <strong>à</strong> très forte<br />

constante diélectrique BaTiO3/SrTiO3 déposé par pulvérisation par faisceau d’ions : année<br />

2002, Rapport interne ST-LETI, 2003.<br />

[10] B.T. Lee, C.S. Hwang, Influ<strong>en</strong>ces of interfacial intrinsic low-dielectric layers on the<br />

dielectric properties of sputtered (Ba,Sr)TiO3 thin films, Applied Physics letters, 2000, vol<br />

77 n°1 p124-126.<br />

[11] K. Natori, D. Otani, N. Sano, Thickness <strong>de</strong>p<strong>en</strong><strong>de</strong>nce of the effective dielectric constant in<br />

a thin film capacitor, Applied Physics letters, 1998, vol 73 n°5 p632-634.<br />

[12] C. Weissmantel, K. Bewilogua, K.Breuer, D. Dietrich, U. Ebersbach, H.J. Erler, B. Rau,<br />

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1982, vol96, p31-44.<br />

[13] E. Defaÿ, B. André, F. Baume, G. Tartavel, D. Muyard, L. Ulmer, Deposition and<br />

characterisation of SrTiO3 thin films <strong>de</strong>posited by ion beam sputtering on platinized silicon<br />

substrates, Ferrolectrics, 2003, vol 288, p121-132.<br />

[14] F. Jona, G. Shirane, Ferroelectric crystals, 1962, Ed. Pergamon Press, Oxford.<br />

133

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