Etude de capacités en couches minces à base d'oxydes métalliques ...
Etude de capacités en couches minces à base d'oxydes métalliques ...
Etude de capacités en couches minces à base d'oxydes métalliques ...
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tel-00141132, version 1 - 11 Apr 2007<br />
Chapitre 1 : Problématique<br />
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access memory applications, Journal of Applied Physics, 1999, vol86, n°2, p871-880.<br />
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amorphous Ta2O5 thin films, Journal of Applied Physics, 2000, vol88, n°2, p850-862.<br />
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Al2O3 and AlTiOx dielectrics, IEEE Electron Device Letters, 2002, vol 23, n°4, p185-187.<br />
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[22] Ch. W<strong>en</strong>ger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.J. Müssig,<br />
First investigation of metal-insulator-metal (MIM) capacitor using Pr2O3 dielectrics,<br />
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[23] S.Y. Lee, H. Kim, P.C. McIntyre, K.C. Saraswat, J.S. Byun, Atomic layer <strong>de</strong>position of<br />
ZrO2 on W for metal-insulator-metal capacitor application, Applied Physics Letters, 2003,<br />
vol 82, n°17, p2874-2876.<br />
[24] S.J. Kim, B.J. Cho, M.F. Li, X. Yu, C. Zhu, A. Chin, D.L. Kwong, PVD HfO2 for highprecision<br />
MIM capacitor applications, IEEE Electron Device Letters, 2003, vol 24, n°6,<br />
p387-389.<br />
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516.<br />
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[27] T. Riekkin<strong>en</strong>, J. Molarius, Reactively sputtered tantalum p<strong>en</strong>toxi<strong>de</strong> thin films for<br />
integrated capacitors, Microelectronic <strong>en</strong>gineering, 2003, vol70, p392-397.<br />
[28] Christophe Durand, Thèse <strong>de</strong> doctorat « Elaboration par PE-MOCVD <strong>à</strong> injection <strong>de</strong><br />
<strong>couches</strong> <strong>minces</strong> d’oxy<strong>de</strong> d’yttrium pour <strong>de</strong>s applications <strong>en</strong> microélectronique avancée »,<br />
Université Joseph Fourier – Gr<strong>en</strong>oble I, Gr<strong>en</strong>oble (2004).<br />
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