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Etude de capacités en couches minces à base d'oxydes métalliques ...

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tel-00141132, version 1 - 11 Apr 2007<br />

Chapitre 1 : Problématique<br />

[16] J.H. Lee, D.H. Kim, Y.S. Park, M.K. Sohn, K.S. Seo, DC and RF characteristics of<br />

advanced MIM capacitors for MMIC’s using ultra-thin remote-PECVD Si3N4 dielectric<br />

layers, IEEE Microwave and Gui<strong>de</strong>d Wave Letters, 1999, vol9, n°9, p345-347.<br />

[17] S. Blonkowski, M. Regache, A. Halimaoui, Investigation and mo<strong>de</strong>ling of the electrical<br />

properties of metal-oxi<strong>de</strong>-metal structures formed from chemical vapor <strong>de</strong>posited Ta2O5<br />

films, Journal of Applied Physics, 2001, vol90, n°3, p1501-1508.<br />

[18] P.C. Joshi, M.W. Cole, Influ<strong>en</strong>ce of post<strong>de</strong>position annealing on the <strong>en</strong>hanced structural<br />

and electrical properties of amorphous and crystalline Ta2O5 thin films for dynamic random<br />

access memory applications, Journal of Applied Physics, 1999, vol86, n°2, p871-880.<br />

[19] R.M. Fleming, D.V. Lang, C.D.W. Jones, M.L. Steigerwald, D.W. Murphy, G.B. Alers,<br />

Y.H. Wong, R.B. van Dover, J.R. Kwo, A.M. Serg<strong>en</strong>t, Defect dominated charge transport in<br />

amorphous Ta2O5 thin films, Journal of Applied Physics, 2000, vol88, n°2, p850-862.<br />

[20] S.B. Ch<strong>en</strong>, C.H. Lai, A. Chin, J.C. Hsieh, J. Liu, High-<strong>de</strong>nsity MIM capacitors using<br />

Al2O3 and AlTiOx dielectrics, IEEE Electron Device Letters, 2002, vol 23, n°4, p185-187.<br />

[21] J. Kim, J. Song, O. Kwon, S. Kim, C.S. Wang, S.H.K. Park, S.J. Yun, J. Jeong, K.S.<br />

Hyun, Improvem<strong>en</strong>t in electrical insulating properties of 10 nm-thick Al2O3 film grown on<br />

Al/TiN/Si substrate by remote plasma annealing at low temperatures, Applied Physics<br />

Letters, 2002, vol80, n°15, p2734-2736.<br />

[22] Ch. W<strong>en</strong>ger, J. Dabrowski, P. Zaumseil, R. Sorge, P. Formanek, G. Lippert, H.J. Müssig,<br />

First investigation of metal-insulator-metal (MIM) capacitor using Pr2O3 dielectrics,<br />

Materials Sci<strong>en</strong>ce in Semiconductor Processing, 2004, vol 7, p227-230.<br />

[23] S.Y. Lee, H. Kim, P.C. McIntyre, K.C. Saraswat, J.S. Byun, Atomic layer <strong>de</strong>position of<br />

ZrO2 on W for metal-insulator-metal capacitor application, Applied Physics Letters, 2003,<br />

vol 82, n°17, p2874-2876.<br />

[24] S.J. Kim, B.J. Cho, M.F. Li, X. Yu, C. Zhu, A. Chin, D.L. Kwong, PVD HfO2 for highprecision<br />

MIM capacitor applications, IEEE Electron Device Letters, 2003, vol 24, n°6,<br />

p387-389.<br />

[25] H. Hu, C. Zhu, Y.F. Lu, M.F. Li, B.J. Cho, W.K. Choi, A high performance MIM<br />

capacitor using HfO2 dielectrics, IEEE Electron Device Letters, 2002, vol 23, n°9, p514-<br />

516.<br />

[26] F. Mondon, S. Blonkowski, Electrical characterisation and reliability of HfO2 and<br />

Al2O3-HfO2 MIM capcitors, Microelectronics Reliability, 2003, vol43, p1259-1266.<br />

[27] T. Riekkin<strong>en</strong>, J. Molarius, Reactively sputtered tantalum p<strong>en</strong>toxi<strong>de</strong> thin films for<br />

integrated capacitors, Microelectronic <strong>en</strong>gineering, 2003, vol70, p392-397.<br />

[28] Christophe Durand, Thèse <strong>de</strong> doctorat « Elaboration par PE-MOCVD <strong>à</strong> injection <strong>de</strong><br />

<strong>couches</strong> <strong>minces</strong> d’oxy<strong>de</strong> d’yttrium pour <strong>de</strong>s applications <strong>en</strong> microélectronique avancée »,<br />

Université Joseph Fourier – Gr<strong>en</strong>oble I, Gr<strong>en</strong>oble (2004).<br />

36

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