Etude de capacités en couches minces à base d'oxydes métalliques ...
Etude de capacités en couches minces à base d'oxydes métalliques ...
Etude de capacités en couches minces à base d'oxydes métalliques ...
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tel-00141132, version 1 - 11 Apr 2007<br />
Chapitre 5 : Influ<strong>en</strong>ce du procédé d’élaboration <strong>de</strong>s <strong>capacités</strong> sur leurs performances<br />
Bibliographie<br />
[1] B.T. Lee, C.S. Hwang, Influ<strong>en</strong>ces of interfacial intrinsic low-dielectric layers on the<br />
dielectric properties of sputtered (Ba,Sr)TiO3 thin films, Applied Physics letters, 2000,<br />
vol 77 n°1 p124-126.<br />
[2] K. Natori, D. Otani, N. Sano, Thickness <strong>de</strong>p<strong>en</strong><strong>de</strong>nce of the effective dielectric constant in<br />
a thin film capacitor, Applied Physics letters, 1998, vol 73 n°5 p632-634.<br />
[3] M. Porti, M. Nafria, X. Aymerich, Electrical characterization of stressed and brok<strong>en</strong><br />
down SiO2 films at a nanometer scale using a conductive atomic force microscope, Journal<br />
of Applied Physics, 2002, vol 91, n°4, p2071–2079.<br />
[4] M. Porti, M. Nafria, X. Aymerich, A. Olbrich, B. Ebersberger, Nanometer-scale electrical<br />
characterization of stressed ultra thin SiO2 films using conducting atomic force microscopy,<br />
Applied Physics Letters, 2001, vol 78, n°26, p4181–4183.<br />
[5] A. Olbrich, B. Ebersberger, C. Boit, Conducting atomic force microscopy for nanoscale<br />
electrical characterization of thin SiO2, Applied Physics Letters, 1998, vol 73, n°21,<br />
p3114–3116.<br />
[6] G. Cellere, M.G. Val<strong>en</strong>tini, A. Paccagnella, Plasma-induced Si/SiO2 interface damage in<br />
CMOS, Microelectronic Engineering, 2002, vol 63, p433-442.<br />
[7] G. Cellere, L. Pantisano, M.G. Val<strong>en</strong>tini, A. Paccagnella, Depassivation of lat<strong>en</strong>t plasma<br />
damage in nMOSFETs, IEEE Transactions on Device and Materials Reliability, 2001,<br />
vol 1, n°3, p144-149.<br />
[8] H.C. Li, C.C. Ch<strong>en</strong>, C.H. Chi<strong>en</strong>, S.K. Hsein, M.F Wang, T.S. Chao, T.Y. Huang, C.Y.<br />
Chang, Evaluation of plasma charging damage in ultrathin gate oxi<strong>de</strong>s, IEEE Electron<br />
Device Letters, 1998, vol 19, n°3, p68-70.<br />
[9] J.H. Ha<strong>en</strong>i, P. Irvin, W. Chang, R. Uecker, P. Reiche, Y.L. Li, S. Choudhury, W. Tian,<br />
M.E. Hawley, B. Craigo, A.K. Tagantsev, X.Q. Pan, S.K. Streiffer, L.Q. Ch<strong>en</strong>, S.W.<br />
Kirchoefer, J. Levy, D.G. Scholm, Room-temperature ferroelectricity in strained SrTiO3,<br />
Nature, 2004, vol 430, p758-761.<br />
[10] B.A. Baumert, L.H. Chang, A.T. Matsuda, T.L. Tsai, C.J. Tracy, R.B. Gregory, P.L.<br />
Fejes, N.G. Cave, W. Ch<strong>en</strong>, D.J. Taylor, T. Otsuki, E. Fujii, S. Hayashi, K. Suu,<br />
Characterization of sputtered barium strontium titanate and strontium titanate-thin films,<br />
Journal of Applied Physics, 1997, vol 82 n°5, p2558-2566.<br />
[11] S. He, Y. Li, X. Liu, B. Tao, D. Li, Q. Lu, Correlations betwe<strong>en</strong> grain size and nonlinear<br />
dielectric properties of as-<strong>de</strong>posited SrTiO3 thin films, Thin Solid Films, 2005, vol 478,<br />
p261-264.<br />
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