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Radio Frequency Integrated Circuit Design - Webs

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The Use and <strong>Design</strong> of Passive <strong>Circuit</strong> Elements in IC Technologies<br />

C oxide = �o �r A<br />

h<br />

8.85 × 10<br />

=<br />

−12 C 2<br />

2 � 3.9 � 2.3 mm � 20 �m<br />

N � m<br />

5 �m<br />

= 317.6 fF<br />

The underpass must be taken into account here as well:<br />

C underpass = � o � r A<br />

h<br />

8.85 × 10<br />

=<br />

−12 C 2<br />

2 � 3.9 � 76 �m � 20 �m<br />

N � m<br />

3 �m<br />

= 17.4 fF<br />

Now we must consider the interwinding capacitance:<br />

C IW = �o �r A<br />

d<br />

8.85 × 10<br />

=<br />

−12 C 2<br />

2 � 11.9 � 2.3 mm � 3 �m<br />

N � m<br />

= 241 fF<br />

3 �m<br />

The dc resistance of the line can be calculated from<br />

R dc = �L<br />

Wt<br />

= 3 �� �cm � 2.3 mm<br />

20 �m � 3 �m<br />

= 1.15�<br />

The skin effect will begin to become important when the thickness of the<br />

metal is two skin depths. This will happen at a frequency of<br />

f =<br />

�<br />

���<br />

2 =<br />

3 �� �cm<br />

� � 4� × 10 −7 2 = 3.38 GHz<br />

� (1.5 �m)<br />

Let us ignore the resistance in the underpass. Thus, above 3.38 GHz the<br />

resistance of the line will be a function of frequency:<br />

�L<br />

R ac( f ) =<br />

Wt −� W − 2√ �<br />

�f���H − 2√ �<br />

�f��<br />

113

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