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Radio Frequency Integrated Circuit Design - Webs

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Index<br />

Local oscillator, 5 Mixing components, 25<br />

frequency, 208, 209, 210, 214, 228, 233 Mixing gain, 206<br />

harmonics, 216 Moore mixer, 227–28, 229, 242<br />

quad switching, 202–6<br />

Multilevel inductor, 124–27<br />

self-mixing, 37 Multistage polyphase filter, 223–24<br />

Loop gain estimation, 260–62, 268–69 Multivibrator oscillator, 313–15<br />

Lossless transmission line, 89<br />

Low-frequency analog design, 2–4<br />

Mutual inductance, 78–81, 129, 136<br />

Low-frequency noise, 291–92<br />

Narrowband common-emitter amplifier, 152<br />

Low-noise amplifier (LNA), 5, 21–22, 37, Narrowband resistor, 75<br />

40, 105, 141, 233<br />

Narrowband transformer model, 128–30<br />

broadband, 189–94<br />

N-channel metal oxide semiconductor,<br />

differential bandpass, 327–29<br />

57–58, 243<br />

input matching, 163–69<br />

N doping, 103<br />

linearity, 172–83<br />

Near-far problem, 40<br />

low-voltage, 184–87<br />

Negative resistance, 248–51, 262–68, 325<br />

noise, 158–72, 338–39<br />

bandstop filter, 329–33<br />

See also Cascode low-noise amplifier;<br />

linearity, 336–37<br />

Common-base amplifier;<br />

See also Feedback<br />

Common-collector amplifier; Noise, 4, 9–22, 35, 203<br />

Common-emitter amplifier<br />

amplifiers, 158–72<br />

Lowpass filter, 6, 217, 221, 383<br />

antenna power, 11–13<br />

Lowpass matching network, 70, 73, 74<br />

bipolar transistor, 53–54<br />

Low-voltage low-noise amplifier, 184–87 broadband amplifier, 191–92<br />

Lumped components, 69<br />

CMOS small-signal model, 58–60<br />

Lumped model, inductor, 108–9<br />

filtering, 337–39<br />

impedance matching, 73–74<br />

Matching, power amplifier, 351–53, 385–88 low-frequency, 291–92<br />

Metal insulator metal capacitor, 103–4, 310 mixers, 206–14, 236–38<br />

Metalization, 95–97<br />

nonlinear, 292–95<br />

Metal migration, 102 oscillator phase, 283–95<br />

Metal oxide semiconductor, 43, 54<br />

thermal, 10–11<br />

Metal oxide semiconductor field-effect transistor model, 55–56<br />

transistor, 43, 58, 180<br />

Noise figure<br />

Microstrip line, 129, 131–34 amplifier circuit, 14–16<br />

Microwave design, 2, 3–4<br />

broadband amplifier, 192–94<br />

Microwave transistor, 91 common-emitter amplifier, 161–63<br />

Miller multiplication, 49–51, 142, 149,<br />

components in series, 16–22<br />

152, 156, 163, 164, 182 concept, 13–14<br />

Minimum shift keying, 395<br />

low-noise amplifier, 164, 169–70<br />

Mixers, 5, 6, 37, 40, 197–98 mixers, 207, 209–14, 233<br />

alternative designs, 227–31<br />

Noise floor, 12, 37<br />

design, 231–42 Noise matching, mixer, 229–30<br />

image reject/single-sideband, 217–27 Noise power, 10<br />

isolation, 217 Noise voltage, 10<br />

linearity, 215–17<br />

Nonlinearity, 4, 23, 24, 26–27, 31–33, 40<br />

noise, 206–14 large-signal transistor, 275–77<br />

See also Controlled transconductance<br />

mixers, 215–17<br />

mixer; Cross-coupled double- power amplifier, 172–83, 394–98<br />

balanced mixer<br />

Nonlinear noise, 292–95<br />

407

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