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Radio Frequency Integrated Circuit Design - Webs

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Power Amplifiers<br />

in class A (input is +5 dBm), the second stage operates in class AB, and the<br />

last two stages operate as switching circuits to deliver substantial power with<br />

relatively high efficiency. (Note that class C amplifiers are also high efficiency,<br />

however, only at low conduction angles; thus they provide high efficiency only<br />

at low power levels.)<br />

Measured results with a 2.5V power supply showed output power of 1W<br />

(30 dBm) with a power added efficiency of 42%.<br />

References<br />

[1] Fowler, T., et al., ‘‘Efficiency Improvement Techniques at Low Power Levels for Linear<br />

CDMA and WCDMA Power Amplifiers,’’ Proc. <strong>Radio</strong> <strong>Frequency</strong> <strong>Integrated</strong> <strong>Circuit</strong>s Symposium,<br />

Seattle, WA, May 2001, pp. 41–44.<br />

[2] Staudinger, J., ‘‘An Overview of Efficiency Enhancements with Applications to Linear<br />

Handset Power Amplifiers,’’ Proc. <strong>Radio</strong> <strong>Frequency</strong> <strong>Integrated</strong> <strong>Circuit</strong>s Symposium, Seattle,<br />

WA, May 2001, pp. 45–48.<br />

[3] Grebennikov, A. V., ‘‘Switched-Mode Tuned High-Efficiency Power Amplifiers: Historical<br />

Aspect and Future Prospect,’’ Proc. <strong>Radio</strong> <strong>Frequency</strong> <strong>Integrated</strong> <strong>Circuit</strong>s Symposium, Seattle,<br />

WA, May 2001, pp. 49–52.<br />

[4] Krauss, H. L., C. W. Bostian, and F. H. Raab, Solid State <strong>Radio</strong> Engineering, New York:<br />

John Wiley & Sons, 1980.<br />

[5] Cripps, S. C., RF Power Amplifiers for Wireless Communications, Norwood, MA: Artech<br />

House, 1999.<br />

[6] Albulet, M., RF Power Amplifiers, Atlanta, GA: Noble Publishing, 2001.<br />

[7] Kenington, P. B., High Linearity RF Amplifier <strong>Design</strong>, Norwood, MA: Artech House,<br />

2000.<br />

[8] Sokal, N. O., and A. D. Sokal, ‘‘Class E: A New Class of High Efficiency Tuned Single-<br />

Ended Power Amplifiers,’’ IEEE J. Solid-State <strong>Circuit</strong>s, SC-10, No. 3, June 1975,<br />

pp. 168–176.<br />

[9] Sowlati, T., and D. Leenaerts, ‘‘A 2.4GHz, 0.18�m CMOS Self-Biased Cascode Power<br />

Amplifier with 23dBm Output Power,’’ Proc. International Solid-State <strong>Circuit</strong>s Conference,<br />

Feb. 2002, pp. 294–295.<br />

[10] Shinjo, S., et al., ‘‘A 20mA Quiescent Current CV/CC Parallel Operation HBT Power<br />

Amplfier for W-CDMA Terminals,’’ Proc. <strong>Radio</strong> <strong>Frequency</strong> <strong>Integrated</strong> <strong>Circuit</strong>s Symposium,<br />

Seattle, May 2001, pp. 249–252.<br />

[11] Pothecary, N., Feedforward Linear Power Amplifiers, Norwood, MA: Artech House, 1999.<br />

[12] Yoo, C., and Q. Huang, ‘‘A Common-Gate Switched 0.9W Class E Power Amplifier with<br />

41% PAE in 0.25�m CMOS,’’ IEEE J. Solid-State <strong>Circuit</strong>s, May 2001, pp. 823–830.<br />

[13] Kuo, T., and B. Lusignan, ‘‘A 1.5W Class-F RF Power Amplifier in 0.25�m CMOS<br />

Technology,’’ Proc. International Solid-State <strong>Circuit</strong>s Conference, Feb. 2001, pp. 154–155.<br />

399

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