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Radio Frequency Integrated Circuit Design - Webs

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336 <strong>Radio</strong> <strong>Frequency</strong> <strong>Integrated</strong> <strong>Circuit</strong> <strong>Design</strong><br />

9.6 Linearity of the Negative Resistance <strong>Circuit</strong>s<br />

All receive-path circuits, including the filter resonator, have to process signals.<br />

If a very large signal is present on the resonator, it will cease to work correctly.<br />

Such large signals will tend to change the effective g m of the transistors in the<br />

resonator, such as Q 3 and Q 4 of Figure 9.11, and therefore the negative resistance.<br />

Thus, as signals get larger, we can expect degradation of image rejection.<br />

To determine the maximum signal size the circuit can handle, we need<br />

to do a large signal analysis. If a transistor is driven with a voltage source v in<br />

and has no degeneration, then the output current can be expressed as an infinite<br />

series:<br />

ic = IC� 1 + v in<br />

vT<br />

+ 1<br />

2�v in<br />

vT� 2<br />

+ 1<br />

6�v in<br />

vT� 3<br />

+ ...�<br />

(9.31)<br />

We now find the g m of this circuit without making a small-signal assumption:<br />

g m = dic<br />

= IC� dv in<br />

1<br />

vT<br />

+ v in<br />

v 2 +<br />

T<br />

1<br />

2<br />

v 2<br />

in<br />

v 3 + ...�<br />

T<br />

= g mss�1 + v in<br />

+<br />

vT<br />

1<br />

2<br />

v 2<br />

in<br />

v 2 + ...�<br />

T<br />

(9.32)<br />

If v in remains relatively small, this takes on the small-signal value g mss of<br />

IC /vT . However, as the signal grows, this value changes. Thus, in the case of<br />

the Colpitts-style resonator as shown in Figure 9.9, the amount of negative<br />

resistance generated R neg relative to the small-signal negative resistance R negss<br />

is<br />

R neg<br />

R negss =<br />

−g m<br />

� 2 C 1C2<br />

−g mss<br />

� 2 C 1C2<br />

=� 1 + v in<br />

+<br />

vT 1 v<br />

2<br />

2<br />

in<br />

v 2 + ...�<br />

T<br />

(9.33)<br />

The current flowing into the resonator will cause a voltage of v be3 =<br />

i in /sC 1 to be developed across the base emitter (assuming that the impedance<br />

of C 1 is much lower than the transistor). As this voltage approaches vT , the<br />

operating point of this transistor will start to shift and its effectiveness will<br />

degrade. Therefore, an input current of<br />

i in_max = v T sC 1<br />

(9.34)

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