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Radio Frequency Integrated Circuit Design - Webs

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Index<br />

Damped resonator, 247–48 Emitter-follower, 182. See also Common-<br />

Dead zone, 99<br />

collector amplifier<br />

De-embedding techniques, 134–39 Equivalent impedance, 80<br />

Degeneration resistor, 192, 202, 228<br />

Equivalent inductance, 77<br />

Desired nonlinearity, 215 Equivalent noise model, 17<br />

Differential amplifier, 183–84<br />

Equivalent source impedance, 16<br />

Differential bandpass low-noise amplifier Even-order impedance, 131<br />

(LNA), 327–29<br />

Excess noise, 54, 286<br />

Differential impedance, 131 Excitation, inductor, 117<br />

Differential inductor, 109, 116–17, 118 Exponential nonlinearity, 172–80<br />

Differential oscillator, 270<br />

Differential-pair amplifier, 183–84,<br />

198–202, 204, 206<br />

Differential-pair mixer, 208<br />

Diffusion capacitance, 51<br />

Diffusion resistance, 55, 103<br />

Digital modulation, 5<br />

Digital signal processing, 1, 57<br />

Direct-conversion bias network, 187–89<br />

Direct-conversion (dc) (homodyne) receiver,<br />

37<br />

Direct-conversion (dc) resistance, 113<br />

Direct-conversion (dc)-to-radio-frequency<br />

(RF) efficiency, 350–51<br />

Direct downconversion receiver, 54<br />

Doping, 103<br />

Doping region, 103<br />

Double-balanced mixer, 200–2, 242–43<br />

Double ell network, 386<br />

Double-sideband noise figure, 207, 210,<br />

214<br />

Downconversion mixer, 202, 206, 207, 216,<br />

218, 228<br />

Dummy open, 135<br />

Dummy short, 135<br />

Dynamic load line, 385–87<br />

Dynamic range, 35–36<br />

Fast Fourier transform (FFT), 194, 238<br />

Feedback<br />

oscillator, 248–68, 325<br />

amplifiers with, 152–58<br />

See also Negative resistance<br />

Feedback linearization, 397–98<br />

Feedforward linearization, 396–97<br />

Field-effect transistor, 197<br />

Fifth harmonics, 206<br />

Fifth-order nonlinearity, 32<br />

Filtering, 105, 206, 209, 218, 221<br />

blockers, 39–41<br />

image signals, 37–39<br />

noise, 337–39<br />

overview, 319<br />

polyphase, 223–24, 239–41<br />

second-order, 319–20<br />

transceiver, 5–6<br />

Finite input impedance, 14<br />

First-order polyphase filter, 222–24<br />

First-order roll-off, 49<br />

First-order term, 24<br />

Flicker noise, 54, 286, 286–87<br />

Flip-chip packaging, 138–39, 394<br />

Folded cascode, 184–85, 235<br />

Forward active region, 44<br />

Forward bias, 44<br />

Early voltage, 45<br />

Edge effect, 131<br />

Efficiency, amplifier, 350–51, 358–59, 378,<br />

384–85<br />

Electromagnetic simulator, 110<br />

Electrostatic discharge, 291–92<br />

Ell networks, 69–71, 87–88, 386<br />

Emitter-base depletion region, 46<br />

Emitter-coupled pair amplifier, 183–84<br />

Emitter crowding, 46<br />

Fourier coefficient, 361<br />

Fourier series, 203, 205, 378<br />

FR4 material, 132<br />

<strong>Frequency</strong> modulation (FM) noise, 283<br />

<strong>Frequency</strong> shift keying (FSK), 395<br />

<strong>Frequency</strong> synthesizer, 5, 6<br />

<strong>Frequency</strong> tuning, 342–43<br />

Fringing, 131<br />

Fringing capacitance, 100–1<br />

Fringing inductance, 102<br />

Emitter degeneration, 137, 152–54, 164, Gain compression, 4, 25–26<br />

178–80, 190, 192, 206<br />

Gallium arsenide, 44, 132<br />

405

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