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Radio Frequency Integrated Circuit Design - Webs

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A Brief Review of Technology<br />

• Pick largest transistor size to give lowest base resistance. This will have<br />

a direct impact on noise. However, on the down side, large size requires<br />

large current for optimal f T . Another negative impact is that junction<br />

capacitances increase with larger transistors.<br />

• Collector shot noise power is proportional to current, but signal power<br />

gain is proportional to current squared, so more current can improve<br />

noise performance if collector shot noise is dominant.<br />

3.11 CMOS Transistors<br />

Bipolar transistors are preferred for RF circuits due to the higher values of g m<br />

achievable for a given amount of bias current. However, for a complete radio<br />

on a chip, it is necessary to use a process that can be used to implement backend<br />

digital or DSP functions. This could be BiCMOS or straight CMOS.<br />

BiCMOS would be preferable, since bipolar can then be used for RF, possibly<br />

adding p-channel MOS (PMOS) transistors for power-control functions.<br />

However, for economic reasons or for the need to use a particular CMOS-only<br />

process to satisfy the back-end requirements, one may be forced to implement<br />

RF circuits in CMOS. For this reason, we give a brief summary of CMOS<br />

transistors. Basic PMOS and n-channel MOS (NMOS) transistors are shown<br />

in Figure 3.14.<br />

Figure 3.14 CMOS transistors.<br />

57

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