Radio Frequency Integrated Circuit Design - Webs

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About the Authors John Rogers received a B.Eng. in 1997, an M.Eng. in 1999, and a Ph.D. in 2002, all in electrical engineering from Carleton University, Ottawa, Canada. During his master’s degree research, he was a resident researcher at Nortel Networks’ Advanced Technology Access and Applications Group, where he did exploratory work on voltage-controlled oscillators and developed a copper interconnect technology for building high-quality passives for radio frequency (RF) applications. From 2000 to 2002, he collaborated with SiGe Semiconductor Ltd. while pursuing his Ph.D. on low-voltage RF integrated circuits (RFIC) for wireless applications. Concurrent with his Ph.D. research, Dr. Rogers worked as part of a design team that developed a cable modem integrated circuit for the DOCSIS standard. He is currently an assistant professor at Carleton University and collaborating with Cognio Canada Ltd. His research interests are in the areas of RFIC design for wireless and broadband applications. Dr. Rogers was the recipient of an IEEE Solid-State Circuits Predoctoral Fellowship, and received the Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) best student paper award in 1999. He holds one U.S. patent with three pending, and is a member of the Professional Engineers of Ontario. Calvin Plett received a B.A.Sc. in electrical engineering from the University of Waterloo, Canada, in 1982, and an M.Eng. and a Ph.D. from Carleton University, Ottawa, Canada, in 1986 and 1991, respectively. From 1982 to 1984 he worked with Bell-Northern Research. In 1989 he joined the Department of Electronics at Carleton University, where he is now an associate professor. Since 1995 he has done consulting work for Nortel Networks in the area of RF and broadband integrated circuit design. He has also supervised numerous graduate students, often cooperatively with industrial partners, including Nortel Net- 401
402 Radio Frequency Integrated Circuit Design works, Philsar, Conexant, Skyworks, IBM, and SiGe Semiconductors. His research interests are in the area of analog integrated circuit design including filters, radio frequency front-end components, and communications applications.
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Radio Frequency Integrated Circuit
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Radio Frequency Integrated Circuit
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Contents Foreword xv Acknowledgment
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Contents 3.8 Base Shot Noise Discus
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Contents 5.25 Packaging 135 5.25.1
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Contents 7.12 General Design Commen
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Contents 9.5 Some Simple Image Reje
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Foreword I enjoyed reading this boo
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Foreword estimates of parasitic cap
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xx Radio Frequency Integrated Circu
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2 Radio Frequency Integrated Circui
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2 Issues in RFIC Design, Noise, Lin
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Issues in RFIC Design, Noise, Linea
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The input noise is Issues in RFIC D
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2.5 Filtering Issues Issues in RFIC
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3 A Brief Review of Technology 3.1
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A Brief Review of Technology IC = I
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3.4 Small-Signal Model A Brief Revi
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3.6 High-Frequency Effects A Brief
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A Brief Review of Technology If thi
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A Brief Review of Technology Soluti
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A Brief Review of Technology 3.8 Ba
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A Brief Review of Technology • Pi
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A Brief Review of Technology 3.16,
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A Brief Review of Technology The tr
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4 Impedance Matching 4.1 Introducti
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Impedance Matching Z 2 = Z in + j
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Figure 4.5 A Smith chart. Impedance
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4.3 Impedance Matching Impedance Ma
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Impedance Matching Figure 4.9 Which
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Impedance Matching Figure 4.11 Lowp
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Impedance Matching section, convers
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Impedance Matching Much as in the p
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Impedance Matching Note that dots i
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Impedance Matching Thus, in the fir
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Impedance Matching The exact resist
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Impedance Matching 4.10 Quality Fac
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Impedance Matching Example 4.7 Matc
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Impedance Matching line to change w
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Impedance Matching S22 = b 2 a2 | a
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Impedance Matching without the need
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96 Radio Frequency Integrated Circu
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100 Radio Frequency Integrated Circ
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Voltage-Controlled Oscillators back
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I C_AVE = 1 Voltage-Controlled Osci
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Voltage-Controlled Oscillators Loop
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Voltage-Controlled Oscillators freq
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Voltage-Controlled Oscillators Figu
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Voltage-Controlled Oscillators from
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Voltage-Controlled Oscillators [10]
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10 Power Amplifiers 10.1 Introducti
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Page 384 and 385: Power Amplifiers Note that this agr
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Page 394 and 395: Power Amplifiers B = 0.1836 0.81Q R
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Page 402 and 403: Example 10.4 Class F Power Amplifie
Page 404 and 405: Figure 10.36 Class H amplifier. Pow
Page 406 and 407: Power Amplifiers ered quite good. O
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Page 412 and 413: Figure 10.44 Multiple transistors.
Page 414 and 415: Power Amplifiers Figure 10.48 Combi
Page 416 and 417: Power Amplifiers have very narrow b
Page 418 and 419: Power Amplifiers Figure 10.53 Feedf
Page 420 and 421: Power Amplifiers in class A (input
Page 424 and 425: Index 1-dB compression point, 30-32
Page 426 and 427: Index Damped resonator, 247-48 Emit
Page 428 and 429: Index Local oscillator, 5 Mixing co
Page 430 and 431: Index Quadrature phase shift keying
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