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Radio Frequency Integrated Circuit Design - Webs

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LNA <strong>Design</strong><br />

The gain of either amplifier at the resonance frequency of the tank in the<br />

collector, ignoring the effect of C� , is found with the aid of Figure 6.10 and<br />

is given by<br />

vout<br />

v in =<br />

−g m R L<br />

�1 + Z E<br />

Z� + g m Z E� ≈−R L<br />

Z E<br />

153<br />

(6.31)<br />

where Z E is the impedance of the emitter degeneration. Here it is assumed that<br />

the impedance in the emitter is a complex impedance. Thus, as the degeneration<br />

becomes larger, the gain ceases to depend on the transistor parameters and<br />

becomes solely dependent on the ratio of the two impedances. This is, of course,<br />

one of the advantages of this type of feedback. This means that the circuit<br />

becomes less sensitive to temperature and process variations.<br />

If the input impedance is matched to R S (which would require an input<br />

series inductor), then the gain can be written out in terms of source resistance<br />

and f T . v out in terms of i x in Figure 6.10 can be given by<br />

vout =−g m v� R L =−g m i x Z� R L<br />

(6.32)<br />

Noting that ix can also be equated to the source resistance R S as ix =<br />

v in /R s :<br />

vout<br />

v in<br />

= −g m Z� R L<br />

R S<br />

assuming that Z� is primarily capacitive at the frequency of interest:<br />

Figure 6.10 Small-signal model used to find the input impedance and gain.<br />

(6.33)

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