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Digital Electronics: Principles, Devices and Applications

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614 <strong>Digital</strong> <strong>Electronics</strong>+V CC(a)+V DD(b)Figure 15.5(a) Basic bipolar memory cell <strong>and</strong> (b) a basic MOS memory cell.to as two-dimensional memories, <strong>and</strong> those with two decoders are referred to as three-dimensionalmemories.Figures 15.8(a) <strong>and</strong> (b) show the timing diagrams during ‘read’ <strong>and</strong> ‘write’ operations respectively.The diagrams are self-explanatory. Read <strong>and</strong> write cycle time intervals of a few nanoseconds to a fewtens of nanoseconds are common in the case of asynchronous SRAMs.

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